2010
DOI: 10.1088/0953-8984/22/39/399804
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Defect structure in aliovalently-doped and isovalently-substituted PbTiO3nano-powders

Abstract: Unfortunately, an incorrect version of figure 4 appeared in the above article. The correct figure is as follows:

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Cited by 6 publications
(7 citation statements)
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“…Contrarily, increased content of Dy 3+ ions reduced the ratio of V Pb - to V Ti -related defects. In addition, the defect structure of Cu 2+ , Fe 3+ , Gd 3+ , and Mn 4+ doped PbTiO 3 nanopowders has been investigated by means of EPR . Similar to the results in “bulk” PbTiO 3 , Fe 3+ and Cu 2+ acting as acceptor dopants at the Ti sites would form defect dipoles with V O .…”
Section: Ferroelectricsmentioning
confidence: 61%
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“…Contrarily, increased content of Dy 3+ ions reduced the ratio of V Pb - to V Ti -related defects. In addition, the defect structure of Cu 2+ , Fe 3+ , Gd 3+ , and Mn 4+ doped PbTiO 3 nanopowders has been investigated by means of EPR . Similar to the results in “bulk” PbTiO 3 , Fe 3+ and Cu 2+ acting as acceptor dopants at the Ti sites would form defect dipoles with V O .…”
Section: Ferroelectricsmentioning
confidence: 61%
“…Lead titanate (PbTiO 3 ) is a typical ABO 3 ferroelectric, which has a high phase transition temperature from cubic paraelectric phase to tetragonal ferroelectric phase at about 763 K. ,,,, It is the end member of PZT solid solution, which is the most famous piezoelectric system. In addition, Pb­(Mg 1/3 Nb 2/3 )­O 3 –PbTiO 3 (PMN–PT) and Pb­(Zn 1/3 Nb 2/3 )­O 3 –PbTiO 3 (PZN–PT) are significant relaxor ferroelectrics because of their ultrahigh piezoelectricity and electromechanical coupling factor. , These materials are used in applications ranging from ferroelectric random access memories to high strain actuators …”
Section: Ferroelectricsmentioning
confidence: 99%
“…7,21,[26][27][28] For example, the substitution of acceptor ion Fe 2+ /Fe 3+ for (Zr, Ti) 4+ sites can produce oxygen vacancies due to charge neutrality and Coulomb force, and lead to the formation of multiply charged defect dipole Fe 0 Zr=Ti À V O . 7,29,30 31 Moreover, the electrons freed from oxygen vacancies will hold the Ti 3d states in the conduction band, which weakens the p bonds between Ti ions and O ions and eventually reduces the ferroelectricity of the PZT system. In contrast, it is unfavorable for dielectric permittivity and piezoelectric charge coefficient.…”
Section: Introductionmentioning
confidence: 99%
“…7,21,26–28 For example, the substitution of acceptor ion Fe 2+ /Fe 3+ for (Zr, Ti) 4+ sites can produce oxygen vacancies due to charge neutrality and Coulomb force, and lead to the formation of multiply charged defect dipole . 7,29,30 There are three types of defects: , and , where “⊥” represents the direction of the defect dipole moment P D perpendicular to that of spontaneous polarization P s , and “‖” represents the orientation of P D being parallel to that of P s . It has been known that defect dipole would form oxygen vacancy planes, pin the movement of domain walls, and induce good hardening properties.…”
Section: Introductionmentioning
confidence: 99%
“…To address this dilemma, a lot of functional fillers with various types and shapes have been mixed with polymers to prepare polymer‐based dielectrics with high‐ ε ′. Generally, there are two kinds of main functional fillers: one is inorganic ceramic fillers with giant‐ ε ′, like BaTiO 3 , CCTO, PZT, etc 16,17 . According to the mixing rules, achieving a desirable ε ′ often needs high loading of fillers (i.e., usually 50 vol%), which inevitably leads to the significant deterioration of mechanical flexibility and processing performance.…”
Section: Introductionmentioning
confidence: 99%