Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation

Ali, Sajid; Reimers, Jeffrey R.; Ford, Michael J.

doi:10.1103/physrevb.97.064101

Cited by 163 publications

(261 citation statements)

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“…4(a), but with higher intensity. Figure 4 dipole, in agreement with theoretical predictions [24,38].…”

Section: Resultssupporting

confidence: 90%

“…An additional property of the N B V N center is the fact that its PL is polarized in the plane and along the C 2v symmetry axis of the defect [8,13,24]. Figures 4(c) and (d) show the PL polarization dependence of a luminescent center emitting at a similar energy as the one in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…One of the most recent additions to the last group has been hexagonal boron nitride (h-BN), where luminescent defects acting as SPSs have been reported both in the visible [8] and in the ultraviolet (UV) spectral ranges [9]. In the last years, several groups have intensively studied the optical properties of the SPSs emitting in the visible spectrum both in bulk h-BN [10-12], as well as in flakes [13-21].Although the structural nature of such centers is still under discussion [8,[22][23][24][25], their good polarization properties [8,13], and the fact that they maintain their quantum character even at elevated temperatures [19], makes them strong candidates as optoelectronic components in integrated quantum devices. Future applications of such quantum centers, however, will depend on (i) the possibility of growing h-BN over large areas with high structural and morphological quality, and (ii) the control over the kind of luminescent defects, as well as their spatial distribution within the h-BN film.…”

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confidence: 99%

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Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

et al. 2018

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We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO 2 /Si substrate, sharp lines are observed in photo-and cathodoluminescence spectra in both the ultraviolet and the visible range. Spatially resolved measurements reveal that the luminescent centers responsible for these lines are localized within microscopic multi-layer islands that form at the nucleation centers of the h-BN film. The comparison of their energy, polarization and phonon replica emission with previous theoretical predictions suggest that the N B V N anti-site could be one of the light emitters present in our sample. Moreover, we have also observed evidences of other kinds of centers that could be associated to defects containing carbon or oxygen. The characterized luminescent defects could have potential applications as quantum light sources. * alberto.h.minguez@pdi-berlin.de 1 I. INTRODUCTION The controlled generation and manipulation of single photons is a key factor for the development of quantum information technologies [1]. One of the most promising platforms for the realization of single photon sources (SPSs) are atom-like emitters based on solid-state systems, since they combine the optical properties of atoms with the scalability of solid-state nanostructures [2]. In addition to the well-known quantum dots [3] and color centers in solids [4], the family of solid-state SPSs includes new low-dimensional systems like carbon nanotubes [5] and two-dimensional materials like WSe 2 [6, 7]. One of the most recent additions to the last group has been hexagonal boron nitride (h-BN), where luminescent defects acting as SPSs have been reported both in the visible [8] and in the ultraviolet (UV) spectral ranges [9]. In the last years, several groups have intensively studied the optical properties of the SPSs emitting in the visible spectrum both in bulk h-BN [10-12], as well as in flakes [13-21].Although the structural nature of such centers is still under discussion [8,[22][23][24][25], their good polarization properties [8,13], and the fact that they maintain their quantum character even at elevated temperatures [19], makes them strong candidates as optoelectronic components in integrated quantum devices. Future applications of such quantum centers, however, will depend on (i) the possibility of growing h-BN over large areas with high structural and morphological quality, and (ii) the control over the kind of luminescent defects, as well as their spatial distribution within the h-BN film. Among the various approaches to synthesize h-BN films, molecular beam epitaxy (MBE)is very promising as it allows the formation of h-BN on different kinds of substrates with precise control over the growth conditions. Recent results have demonstrated the feasibility of MBE for the large-area growth of h-BN films on Ni [26], as well as on pyrolytic graphite [27] and on graphene on SiC [28]. Moreover, the MBE-growth of vertical heterostructure films combining...

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“…4(a), but with higher intensity. Figure 4 dipole, in agreement with theoretical predictions [24,38].…”

Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

et al. 2018

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“…3 [34] it was calculated that the C B N V center has the strongest coupling to an in-plane breathing mode of the defect center, which has an energy of 30 meV. Also other studies suggest this atomic structure as promising candidate for the hBN color center [49,50]. This motivates us to interpret the LE 2 mode in the phenomenological model in Sec.…”

Section: Theoretical Modelmentioning

confidence: 96%

Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride

et al. 2019

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Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling to phonons is remarkable. Their photoluminescence exhibits significant side band emission well separated from the zero phonon line (ZPL) and an asymmetric broadening of the ZPL itself. In this combined theoretical and experimental study we show that the phonon side bands can be well described in terms of the coupling to bulk longitudinal optical (LO) phonons. To describe the ZPL asymmetry we show that in addition to the coupling to longitudinal acoustic (LA) phonons also the coupling to local mode oscillations of the defect center with respect to the entire host crystal has to be considered. By studying the influence of the emitter's wave function dimensions on the phonon side bands we find reasonable values for size of the wave function and the deformation potentials. We perform photoluminescence excitation measurements to demonstrate that the excitation of the emitters is most efficient by LO-phonon assisted absorption. arXiv:1903.11295v1 [cond-mat.mes-hall]

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“…hyperfine tensors and zero field splitting with considerable accuracy 149 . In our recent work, we have assigned observed h-BN EPR signals at 22.4 MHz (TBC type), 20.83 MHz (TBC type), and 352.70 MHz (OBC type) to the VN, CN, and VNO2 defects, respectively86 . However, there is no evidence that these EPR-active defects also account for any observed single photon emission.…”

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confidence: 99%

Single-photon emitters in hexagonal boron nitride: a review of progress

2020

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This report summarizes progress made in understanding properties such as zerophonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

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Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation

Abstract: Abstract:Key properties of 9 possible defect sites in hexagonal boron nitride (h-BN)

Cited by 163 publications

References 72 publications

Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride

Single-photon emitters in hexagonal boron nitride: a review of progress

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