Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials

Mazza, Michaël; Cabán-Acevedo, Miguel; Wiensch, Joshua D.; Thompson, Annelise C.; Lewis, Nathan S.

doi:10.1021/acs.nanolett.0c00179

Cited by 7 publications

(8 citation statements)

References 33 publications

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“…A similar strategy was reported for the patterned ALD of TiO 2 on 2D TMCs using TDMAT and H 2 O. [179] The local defects on the surface serve as adsorption sites for the precursor, which enables defect-selective deposition. The presence of extended triangular stacking-fault nodes and pristine opposite-facing surfaces under supersaturation conditions resulted in the triangular-network deposition of ALD-grown metal oxides (Figure 9c-f).…”

Section: Low-dimensional Nanomaterials Formation On 2d Tmcs By Aldmentioning

confidence: 94%

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Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

et al. 2021

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V, Fe, Co, and Ni chalcogenides exhibit diverse stoichiometric phases with different electrical properties. [28][29][30] For example, TiS 3 is a semiconductor, while TiS 2 exhibits metallic properties. [30,31] Owing to their electrical conductivity, metallic TMCs can be used for energy conversion (including the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER)) and energy storage (Li-ion batteries (LIBs), Na-ion batteries (NIBs), and supercapacitors). [29,32] Industrially compatible synthesis methods and applications are of key importance in the research of new materials. Therefore, atomic layer deposition (ALD)-based 2D TMC materials, which are applicable in industries, have been investigated. [33][34][35][36] Initially, 2D TMCs were mechanically exfoliated to determine their single-crystal characteristics. [11,20] However, the large-area synthesis and control of the layer number of TMCs are crucial. [2,37] ALD, which is a suitable synthesis method for 2D TMCs, is based on the surface reactions of the alternately supplied vapor-phase precursors. [38,39] Because it is one of the most powerful deposition methods for synthesizing uniform thin films on large areas, the next-generation low-power/ high-efficiency electronic and energy applications of materials synthesized/modified by ALD processes have been studied. [38,39] For industrial applications, the electrical, optical, and physical properties of 2D TMCs need to be improved. [18,[40][41][42][43] In addition to the synthesis of 2D TMCs, the ALD method can be used to modify 2D TMCs. In particular, the performance of 2D TMCs can be improved by depositing other materials on 2D TMCs via ALD. [44] By depositing metal oxide thin films or metal nanoparticles on 2D TMCs by ALD, the electrical properties of 2D TMC materials can be precisely controlled, the catalyst efficiency can be modulated, and strain can be induced to change the physical properties of the 2D TMCs. [45][46][47] However, because of their unique structures, ALD on 2D TMCs is quite challenging. For example, the film growth behavior on 2D TMCS is significantly different from the film growth behavior on 3D materials during ALD because of the absence of chemical sites on 2D TMCs. [48][49][50][51] Therefore, for thin film deposition on 2D TMCs by ALD, researchers have focused on improving the uniformity of thin films or synthesizing low-dimensional nanomaterials on 2D TMCs.Herein, the synthesis of 2D TMCs by ALD is reviewed and the synthesis methods are classified based on different types of ALD methods. The synthesis of TMCs by the ALD of transition Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by th...

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Section: Low-dimensional Nanomaterials Formation On 2d Tmcs By Aldmentioning

confidence: 94%

Section: Low-dimensional Nanomaterials Formation On 2d Tmcs By Aldmentioning

confidence: 99%

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Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

et al. 2021

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“…To be precise, research on the production of 2D MoS 2 nanomaterials could focus on two categories: top-down and bottom-up methods. [87,129] The former is principally based on the weak van der Waals forces to peel off the bulk MoS 2 , [129,136] which mainly include mechanical exfoliation, [137,138] chemical exfoliation, [139,140] and liquid-phase exfoliation. [141,142] The latter is based on metal salts as precursors to assemble MoS 2 nanosheets by a series of chemical reactions, [143] which can achieve large-scale production by overcoming the limitation of flake size and yield of exfoliation techniques.…”

Section: Preparation Of 2d Mosmentioning

confidence: 99%

2D Molybdenum Sulfide‐Based Materials for Photo‐Excited Antibacterial Application

Chen

Luo

Liu

et al. 2022

Adv Healthcare Materials

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Bacterial infections have seriously threatened human health and the abuse of natural or artificial antibiotics leads to bacterial resistance, so development of a new generation of antibacterial agents and treatment methods is urgent. 2D molybdenum sulfide (MoS 2 ) has good biocompatibility, high specific surface area to facilitate surface modification and drug loading, adjustable energy bandgap, and high near-infrared photothermal conversion efficiency (PCE), so it is often used for antibacterial application through its photothermal or photodynamic effects. This review comprehensively summarizes and discusses the fabrication processes, structural characteristics, antibacterial performance, and the corresponding mechanisms of MoS 2 -based materials as well as their representative antibacterial applications. In addition, the outlooks on the remaining challenges that should be addressed in the field of MoS 2 are also proposed.

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“…Layered materials, such as graphene and molybdenum disulfide, lack dangling bonds on the basal plane. Consequently, ALD film growth occurs preferentially at step edges and defect sites. , The dangling bonds or otherwise functionalized species at these grain boundaries, folds, cracks, and line defects are substantially more reactive than the pristine basal plane. When a strong oxidant is removed from the ALD process, the basal plane is not supersaturated with water molecules or hydroxyl groups.…”

mentioning

confidence: 99%

Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects

Mazza

Cabán-Acevedo

et al. 2021

ACS Mater. Au

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Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective waterbased ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target defect regions on the graphene sheet, while keeping the basal plane intact, will provide a new mechanism to passivate graphene defects and modify the electronic and physical properties of graphene.

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Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials

Cited by 7 publications

References 33 publications

Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

2D Molybdenum Sulfide‐Based Materials for Photo‐Excited Antibacterial Application

Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects

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