Defect Related Leakage Current Components in SiC Schottky Barrier Diode

Ohtsuka, K.; Nakatani, Toshio; Nagae, Akemi; Watanabe, Hiroshi; Nakaki, Y.; Fujii, Yoshiyuki; Fujihira, Keiko; Nakata, Shuhei; Yutani, Naoki

doi:10.4028/www.scientific.net/msf.725.53

Cited by 3 publications

(2 citation statements)

References 10 publications

(11 reference statements)

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“…Performances of SiC power devices are affected by macro-and micro-scopic defects. It was reported that nano-scale pits on the SiC surface cause the increase of leakage current in SBDs (Schottky Barrier Diodes) and JBSs (Junction Barrier Schottky diodes) due to the concentration of electric fields at the pits peak [1,2]. Konishi et al reported that the some kind of stacking faults (SFs) forming triangular defects enhance the leakage current of JBSs [3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Hasegawa

Konishi

Nakamura

et al. 2014

MSF

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We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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Section: Introductionmentioning

confidence: 99%

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Hasegawa

Konishi

Nakamura

et al. 2014

MSF

Self Cite

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“…In earlier investigations, crystal defects with significant effects on devices have been identified. [14][15][16][17][18][19][20][21][22][23][24] However, some triangular defects affect device performance while others do not. 19) The reason for this remains unknown.…”

Section: Introductionmentioning

confidence: 99%

Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes

Konishi

Nakata

Nakaki

et al. 2013

Jpn. J. Appl. Phys.

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The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current–voltage (I–V) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the SF(4,2) structure inside a triangular defect do not lead to deterioration of device performance in this case.

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Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

Long

Ren

Guo

et al. 2020

Journal of Applied Physics

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Power electronic devices for high-voltage applications prefer wide-bandgap semiconductors such as silicon carbide, whereas the immaturity of epitaxial growth technology introduces many extended defects, some of which are crucial to the electrical performance of fabricated devices. Therefore, it is much expected to find out some deep relation between extended defects and device performance. In this work, based on comparisons of breakdown behaviors of 4H-SiC power diodes with or without extended defects of different types, the importance of several features of the extended defect, including the distance, length, and orientation, is reported. Besides, based on the experimental results from dark-field microscopy, near-ultra-violet photoluminescence and topography, and theoretical analysis with numerical calculations, the mechanism of a particular asymmetric breakdown behavior in 4H-SiC devices along the step-flow direction is revealed, which originates from the prevalent step-controlled epitaxy technology for the commercial 4H-SiC epitaxial wafer. With the proposed result and understanding, it is possible to achieve a higher yield in production at a similar material cost.

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Defect Related Leakage Current Components in SiC Schottky Barrier Diode

Cited by 3 publications

References 10 publications

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes

Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

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