Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Tendille, Florian; Mierry, P. de; Vennéguès, P.; Chenot, Sébastien; Teisseire, M.

doi:10.1016/j.jcrysgro.2014.07.020

Cited by 63 publications

(75 citation statements)

References 31 publications

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“…7) emits more light despite having a wider XRD ω FWHM. Nevertheless, QWs on hetero-epitaxial templates gave at best a third of the PL intensity compared to QWs grown on GaN templates on patterned r-plane sapphire, which can reach closer or even below 10 8 cm −3 defects [31][32][33]. Table 1 summarizes the XRD and AFM data that can be achieved using the various approaches discussed in this work and compared them to typical results on patterned substrate from Refs.…”

Section: Resultsmentioning

confidence: 90%

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Pristovsek

Frentrup

Han

et al. 2015

Physica Status Solidi (b)

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The hetero‐epitaxy of (11true2‾2) GaN on (10true1‾0) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low‐temperature AlN interlayers (ILs) as well as a SiNx IL. X‐ray diffraction (XRD) of ω scans of the symmetric (11true2‾2) reflection yielded an ω FWHM <450″ along [11true2‾true3‾] and <900″ along [10true1‾0] together with a 100×100thinmathspaceμm2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈109cm−2 while the basal plane stacking fault density was in the lower 105cm−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10true1‾true3‾) phase was lower than 1 in 10,000 as judged from XRD.

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Section: Resultsmentioning

confidence: 90%

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Pristovsek

Frentrup

Han

et al. 2015

Physica Status Solidi (b)

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“…Using the growth technology of OCE, the SFs density can be further reduced to below ≈10 4 cm −1 . Due to the right angle between [11

\overset{true¯}{2}

2] and [0001] directions, the SFs generated in N‐polar (000

\overset{true¯}{1}

) GaN region during the growth of (11

\overset{true¯}{2}

2) GaN can be blocked or buried by neighboring Ga‐polar (0001) GaN, as depicted by the schematic diagram in previous studies . The density of SFs has been reduced to be below ≈10 2 cm −1 .…”

Section: Development Of Semipolar/nonpolar Gan On Foreign Substratesmentioning

confidence: 93%

“…More recently, several groups have developed an approach that we term orientation controlling epitaxy (OCE) to produce high‐quality semipolar GaN upon coalescence on the patterned substrates . This approach, designated as the Gen III, was accomplished by selective area growth of GaN from inclined sidewalls on stripe‐patterned sapphire or Si substrates.…”

Section: Development Of Semipolar/nonpolar Gan On Foreign Substratesmentioning

confidence: 99%

High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire

Song

Han

2019

Physica Status Solidi (b)

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The heteroepitaxy efforts to grow semipolar and nonpolar GaN on foreign substrates of the past 20 years are reviewed and summarized. With the demonstration of three representative semipolar GaN grown on sapphire, the capability to produce semipolar GaN with any orientation on sapphire is exhibited. Also, a unique growth technology called facet‐engineered orientation‐controlling growth to eliminate the stacking faults (SFs) in semipolar GaN is developed and SF‐free (202true¯1) GaN grown on sapphire is presented, demonstrating the capability of producing device‐quality, large‐area semipolar GaN. InGaN green light‐emitting diodes (LEDs) grown on the SF‐free semipolar (202true¯1) GaN/sapphire templates are performed with much higher external quantum efficiency in comparison with the typical semipolar/nonpolar LEDs heteroepitaxially grown on foreign substrates reported before.

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“…4 One of the major challenges limiting the realisation of long wavelength light emitters based on semipolar III-nitrides is the unavailability of large area, low cost, and high crystalline quality semi-polar GaN templates. 5 The heteroepitaxial growth of semi-polar nitrides on sapphire and silicon substrates is a way forward, but their crystal quality still needs to be improved. High residual strains due to the mismatch of the lattice constants and thermal expansion coefficients between the GaN film and the sapphire substrate induce the formation of extended defects such as dislocations and stacking faults.…”

Section: Introductionmentioning

confidence: 99%

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Naresh-Kumar

Thomson

Zhang

et al. 2018

Journal of Applied Physics

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Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In this work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD densities were estimated to be ≈4 × 104 cm−1 and ≈5 × 108 cm−2, respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquiring the backscattered electrons and the latter collecting the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.

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Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Cited by 63 publications

References 31 publications

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

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