Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

Känel, H. von; Miglio, Leo; Crippa, Danilo; Kreiliger, Thomas; Mauceri, Marco; Puglisi, Marco; Mancarella, F.; Anzalone, Ruggero; Piluso, Nicolò; Via, F. La

doi:10.4028/www.scientific.net/msf.821-823.193

Cited by 14 publications

(9 citation statements)

References 11 publications

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“…Specific patterning of Si substrate has been proposed in order to further decrease the amount of extended defects. [9][10][11][12][13] Lower SF densities are observed at the surface of 3C-SiC layers grown on undulate, [14] pyramidal-shape, [15,16] and pillar-shape patterned substrates. [9,10] At this, however, the desired defect level for device performance (10 2 cm −1 ) has not been reached so far.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12][13] Lower SF densities are observed at the surface of 3C-SiC layers grown on undulate, [14] pyramidal-shape, [15,16] and pillar-shape patterned substrates. [9,10] At this, however, the desired defect level for device performance (10 2 cm −1 ) has not been reached so far. [17][18][19] The effectiveness of growing techniques and their optimization strictly depend on the understanding of the evolution mechanisms of SFs and terminating them partial dislocations during deposition.…”

Section: Introductionmentioning

confidence: 99%

“…[ 9–13 ] Lower SF densities are observed at the surface of 3C‐SiC layers grown on undulate, [ 14 ] pyramidal shape, [ 15,16 ] and pillar shape patterned substrates. [ 9,10 ] At this, however, the desired defect level for device performance (

10^{2} {cm}^{- 1}

) has not been reached so far. [ 17–19 ]…”

Section: Introductionmentioning

confidence: 99%

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Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Barbisan

Sarikov

Marzegalli

et al. 2021

Physica Status Solidi (b)

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Classical molecular dynamics simulations are employed to investigate the three-dimensional evolution of stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during growth of 3C-SiC layers on Si(001). It is shown that the evolution of single PD loops releasing tensile strain during the initial carbonization stage, commonly preceding 3C-SiC deposition, leads to the formation of experimentally observed V -or ∆-shaped stacking faults, the key role being played by the differences in the mobilities between Si-and C-terminated partial dislocation segments. Nucleation in the adjacent planes of PD loops takes place at later stage of 3C-SiC deposition, when slightly compressive-strain conditions are present. It is shown that such a process very efficiently decreases the elastic energy of the 3C-SiC crystal. The maximum energy decrease is obtained via the formation of triple stacking faults with common boundaries made up by PD loops yielding a zero total Burgers vector. Obtained results explain the experimentally observed relative abundance of compact microtwin regions in 3C-SiC layers as compared to the other stacking fault related defects.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Barbisan

Sarikov

Marzegalli

et al. 2021

Physica Status Solidi (b)

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“…The method has been successfully applied to several heteroepitaxial systems such as Ge/Si [11,12,13], GaAs/Si [14,15], GaAs/Ge/Si [16] and GaN/Si [17]. It has already been demonstrated also for 3C-SiC/Si in References [9,18], with beneficial effects on the crystal quality [18] and a substantial decrease in defectivity [19,20].…”

Section: Introductionmentioning

confidence: 99%

“…In order to achieve a smooth morphology, without holes and irregularities, surface diffusion has to be active [23] thus requiring the growth to be performed at high-temperature. Growth of 3C-SiC suspended layers, arranged into patches as large as hundreds of micrometers, was reported in References [8,19]. The reduced bowing made possible by the pillar architecture allowed for the growth of thick (up to 20 μm), single-crystal 3C-SiC layers with a significant reduction in stacking faults density compared to the case of unpatterned substrates [9].…”

Section: Introductionmentioning

confidence: 99%

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

et al. 2019

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3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the effects of lattice and thermal expansion mismatch. Three-dimensional micro-crystals with sharply-faceted profiles are obtained, eventually touching with each other to form a continuous layer, suspended on the underlying pillars. By comparing experimental data and simulation results obtained by a phase-field growth model, here we demonstrate that the evolution of the crystal morphology occurs in a kinetic regime, dominated by the different incorporation times on the crystal facets. These microscopic parameters, effective to characterize the out-of-equilibrium growth process, are estimated by a best-fitting procedure, matching simulation profiles to the experimental one at different deposition stages. Then, simulations are exploited to inspect the role of a different pillar geometry and template effects are recognized. Finally, coalescence of closely spaced crystals ordered into an hexagonal array is investigated. Two possible alignments of the pattern are compared and the most convenient arrangement is evaluated.

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Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

Barbisan

Scalise

Marzegalli

2022

Physica Status Solidi (b)

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The crossing of stacking faults (SFs) (namely dislocation forests) in 3C‐SiC is experimentally probed to cause detrimental effects on the electronic properties of the layer. By means of classical molecular dynamics simulations, for the first time the evolution of two crossing partial dislocation loops is shown, revealing the mechanism that leads to the formation of a complex defect at their intersection. The obtained atomistic structure is then further refined by ab initio calculations, revealing that this defect does not cause defect states within the gap of the pristine material. The case of the intersection of two double‐dislocation loops, that is, involving double SFs, in the hypothesis that the evolution follows the same mechanism found for single‐dislocation loops is also investigated. Contrary to the single‐plane intersection, the simulations reveal that the junction formed by double‐dislocation loops does cause intragap states, thus suggesting detrimental effects on the electronic properties of the 3C‐SiC layers.

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Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

Cited by 14 publications

References 11 publications

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

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