“…The increase in the electrical resistivity of molybdenum following irradiation results from the creation of transmutation products and the creation of point defects such as vacancies and interstitials, defect clusters, dislocation loops, and voids, while the change in hardness after irradiation results from the formation of defects that have a strong influence on dislocation mobility, such as loops and voids [13,26,37,39]. The defects that produce the largest increase in electrical resistivity are recovered at Stage III annealing temperatures (%160°C), which are less than the irradiation temperatures (270-1100°C) so that recovery of these defects would occur during the irradiations [26,[42][43][44][45][46]. The defects produced by irradiation at 270°C and 605°C are expected to be a high number density of small dislocation loops and/or voids that are shown to have a relatively small effect on properties that are controlled by electronic conduction mechanisms such as electrical resistivity, but have a strong effect on dislocation mobility.…”