Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy

Shiojima, Kenji; Konishi, Hiroaki; Imadate, Hiroyoshi; Yamaoka, Yuya; Matsumoto, K.; Egawa, Takashi

doi:10.7567/ssdm.2017.ps-6-13

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2018

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“…We formed Ni Schottky contacts on this HEMT structure, and carried out SIPM to characterize crystal defects in AlGaN=GaN layers grown on Si substrates by two-dimensional mapping in our previous study. 23) In this study, we characterized the surface morphology using a laser microscope and clarified the correlation between the defects and electrical characteristics of the contacts.…”

Section: Introductionmentioning

confidence: 99%

Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

Shiojima

Konishi

Imadate

et al. 2018

Jpn. J. Appl. Phys.

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We have demonstrated the use of scanning internal photoemission microscopy (SIPM) to characterize crystal defects in an AlGaN/GaN heterostructure grown on Si substrates. SIPM enabled the visualization of unusually grown regions owing to cracking of the Si substrates. In these regions, photocurrent was large, which was consistent with leaky current–voltage characteristics. We also found smaller photoyield regions, which may originate from the Al-rich AlGaN regions on hillocks. We confirmed the usefulness of SIPM for investigating the inhomogeneity of crystal quality and electrical characteristics from macroscopic viewpoints.

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Section: Introductionmentioning

confidence: 99%