Defect-mediated sputtering process of boron nitride during high incident angle low-energy ion bombardment

Michałowski, Paweł Piotr; Maciążek, Dawid; Postawa, Zbigniew; Caban, P.; Kozdra, Sylwia; Wójcik, Adrianna; Baranowski, J. M.

doi:10.1016/j.measurement.2021.109487

Cited by 6 publications

(2 citation statements)

References 52 publications

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“…We also performed SIMS measurements with atomic depth resolution to investigate the stacking order and exclude the possibility that MoS 2 intercalated between graphene and WS 2 . During SIMS experiments with high incident angles, most primary ions are reflected from the surface, and only defects (particularly vacancies) may act as erosion centres [42]. However, if any layer is discontinuous, a direct collision with primary ions may occur, significantly enhancing the sputtering process.…”

Section: Growth Of Mos 2 On Ws 2 /Graphenementioning

confidence: 99%

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

et al. 2022

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Van der Waals heterostructures (vdWHS) provide a unique playground to study fundamental physics and practical applications of two-dimensional (2D) materials. However, most 2D heterostructures are prepared by transfer, hindering their technological implementation. Here, we report the first chemical vapour deposition (CVD) of monolayered MoS2/WS2/graphene vertical vdWHS without transfer step. By atomic force microscopy, photoluminescence, Raman spectroscopy, and secondary ion mass spectroscopy, we confirmed the vertical stacking of three different 2D materials. The use of WS2, graphene, and sapphire as growth substrates allowed us to describe the 2D materials growth process better. We determined that for the synthesis of 2D materials, only the chemical potential of the crystal formation and the substrate-layer adhesion energy are relevant factors. In addition, we used MoS2/WS2/graphene vdWHS to fabricate a photoresponsive memory device, showing the application potential of such heterostacks. Our results clarify the growth mechanisms of 2D materials and pave the way for the growth of more complex van der Waals heterostructures.

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Section: Growth Of Mos 2 On Ws 2 /Graphenementioning

confidence: 99%

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

et al. 2022

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“…Therefore, these values are not used further. In order to investigate this contradiction Secondary Ion Mass Spectrometry (SIMS) analyses were carefully done at the 4H-SiC/Ti3SiC2-interface of sample A by using a CAMECA IMS SC Ultra SIMS tool which allows a sub-nm resolution [28,29]. The sub-nm depth resolution was achieved for O 2+ primary ions with an impact energy of 250 eV.…”

Section: Determination Of Schottky Barrier Heightmentioning

confidence: 99%

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

et al. 2021

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Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.

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Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation

Sharopov

2024

SpringerBriefs in Materials

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Defect-mediated sputtering process of boron nitride during high incident angle low-energy ion bombardment

Cited by 6 publications

References 52 publications

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation

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Defect-mediated sputtering process of boron nitride during high incident angle low-energy ion bombardment

Cited by 6 publications

References 52 publications

Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation

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Product

Resources

About

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure