Defect mapping of active layer of CdTe solar cells using charge deep level transient spectroscopy (Q-DLTS)

Fahad, Shah; Noman, Muhammad; Qureshi, A.F.; Ali, Muhammad Umair; Ahmed, Sheikh Z.

doi:10.1016/j.engfailanal.2020.104991

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…For greater effectiveness in CdTe solar cells, it is necessary to maintain a minimum defect and to achieve a defect value of 1 × 10 14 cm −3 . This defect density value is achievable in comparison to the experimental investigation, [ 61–63 ] which demonstrated a defect density that is significantly less than this value. The experimental study specifies a defect value in the range of 1 × 10 9 to 1 × 10 13 cm −3 .…”

Section: Resultsmentioning

confidence: 67%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

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Section: Resultsmentioning

confidence: 67%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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“…Q-DLTS is the charge relaxation technique based on the measurement of transients produced during discharge time interval followed by required charging potential [48][49][50]. In our case, we have intentionally subjected the PVA electrolyte at ground zero potential and applied 1 V charging bias to the xyplane for a limited duration of * 10 ms. After this duration, the applied bias was removed and the device reduced its potential from 1 V to the ground zero in a time duration known as ''Discharge time.''…”

Section: Resultsmentioning

confidence: 99%

Investigation of charge and current dynamics in PVA–KOH gel electrolyte-based supercapacitor

Rehman

Shuja

Ali

et al. 2021

J Mater Sci: Mater Electron

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Poly-vinyl alcohol (PVA)-based electrolytes can play a vital role in the development of supercapacitors by providing a desirable charge separator layer with an added advantage of stretchable nature. These properties enable them as a global contender in wearable electronics and charge storage applications. In this study, the PVA-based electrolyte has been synthesized with potassium hydrooxide (KOH) as ionic migration agent, which may enhance the electronic double-layers capacitance (EDLC) phenomena. In order to mechanically strengthen the graphene-based activated carbon, larger pore fabric is utilized for its encapsulation. Post-fabrication analysis of the supercapacitor using the standard imaging/microscopy techniques (scanning electron microscopy, electron-dispersive electroscope, and atomic force microscopy) are carried out as initial diagnostic test. For detailed electrical, optical, and charge-based evaluation, electrochemical impedance spectroscopy (EIS), Nyquist plot analysis, currentvoltage (I-V) measurements, charged deep-level transient spectroscopy (Q-DLTS), and photoluminescence spectroscopy (PLs) are performed. The fabricated supercapacitor took * 30 min to completely discharge itself at ''full load operation.'' The band diagram, at carrier transport levels, has also revealed the presence of two possible trap centers which may be responsible for the degradation and/or overall stability of the supercapacitor.

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“…As a polycrystalline absorbing material, CdTe thin film exhibits many grain boundaries and inter-grain dislocations 8 . Defect mapping for CdTe material shows high recombination at 0.448 eV, 0.383 eV, 0.366 eV, and 0.341 eV located within the bandgap of CdTe 9 . Other works revealed that dislocations in the CdTe layer give a shallow to mid-level of around 0.17 eV or a deep level of about 0.7 eV below the conduction band 10 , 11 .…”

Section: Introductionmentioning

confidence: 99%

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Isah,

Doroody,

Rahman

et al. 2024

Sci Rep

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A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm−3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 1015 cm−3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.

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Defect mapping of active layer of CdTe solar cells using charge deep level transient spectroscopy (Q-DLTS)

Cited by 7 publications

References 21 publications

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Investigation of charge and current dynamics in PVA–KOH gel electrolyte-based supercapacitor

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

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