Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Kim, K.H.; Gul, R.; Carcélen, V.; Bolotinkov, A.E.; Carmarda, G.S.; Yang, Ge; Hossain, Anwar; Cui, Yunlong; James, R. B.; Hong, Jinki; Kim, S.U.

doi:10.1016/j.jcrysgro.2009.11.069

Cited by 15 publications

(6 citation statements)

References 7 publications

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“…The trap level T 8 with the activation energy 0.320 eV is identified as impurity acceptor of copper having the similar position as reported by Pavlovic and Eiche et al [24,25]. Trap T 9 with the activation energy about 0.406 eV is thought to be introduced by complex acceptor [Pb Cd þV Cd À 2 ] as reported by Kim [26]. Traps T 10 and T 11 with the trap energies of 0.470 eV and 0.510 eV have also been observed by Ido et al and Ye et al [27,28] and thought to be residual impurities in CdTe:In and n-type CdTe, respectively.…”

Section: Resultssupporting

confidence: 77%

Characterization of CdZnTe co-doped with indium and lead

Zaman

Wang

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Resultssupporting

confidence: 77%

Characterization of CdZnTe co-doped with indium and lead

Zaman

Wang

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…In case of Pb-doped CZT detectors, a 9-mm-thick detector had a good response; the results have been published elsewhere. 14 …”

Section: Electrical and Radiation Responsesmentioning

confidence: 99%

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

Gul

Keeter

Rodriguez

et al. 2011

Journal of Elec Materi

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We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V Cd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd ] + -V Cd 2À ] À . Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd ), and a deep trap at around 1.1 eV.

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“…Recently, defects related to Cd or Te inclusions, have been shown to affect the device performance significantly. 8,9 Inclusions are formed by capturing of the melt droplets on the growth interface during crystallization in contrast to precipitates, which are created during cooling of the crystal due to the retrograde solubility of the excess component in the solid. 10,11 Because of high Cd partial pressure, excess Cd is usually added to raw materials to compensate for the loss of Cd element.…”

Section: Introductionmentioning

confidence: 99%

Observation, morphology evolution and elimination of Cd inclusions in indium-doped CdZnTe single crystals

Yu¹,

Wang²

2013

CrystEngComm

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In this paper, several interesting kinds of Cd inclusions were observed in indium-doped CdZnTe (CZT:In) crystals. Characterizations revealed that all inclusions were actually clusters of many irregular Cd precipitates with a size lower than 1 mm. The needle-like Cd inclusion only had three orientations (12 ¯1),(2 ¯11) and ( 211) along which dislocations and stacking faults lie. The cross-like Cd inclusion consisted of two crossed needle-like inclusions with a 120u included angle. And the star-like Cd inclusion consisted of three crossed needle-like inclusions with a 120u included angle to each other. The mechanism of morphology evolution of Cd inclusions is proposed for the first time. Moreover, all kinds of Cd inclusions could be completely eliminated by appropriate post-growth annealing under a Te atmosphere.

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Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Cited by 15 publications

References 7 publications

Characterization of CdZnTe co-doped with indium and lead

Characterization of CdZnTe co-doped with indium and lead

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

Observation, morphology evolution and elimination of Cd inclusions in indium-doped CdZnTe single crystals

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