2006
DOI: 10.1016/j.ssi.2005.11.022
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Defect interactions in La0.3Sr0.7Fe(M′)O3−δ (M′=Al, Ga) perovskites: Atomistic simulations and analysis of p(O2)-T-δ diagrams

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Cited by 22 publications
(34 citation statements)
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“…However, all attempts to consider p-type charge carrier localization on the nearest neighboring sites around a given hole failed. The atomistic computer simulation studies [19] confirmed that such situation is, indeed, very unlikely for perovskiterelated lattices due to coulombic repulsion forces. The holes in undoped La 2 NiO 4+d may, therefore, have 5 actual energy levels, which originate from the interaction with other holes located in the second coordination sphere (Fig.…”
Section: Defect Interaction In La 2 Nio 4+dmentioning
confidence: 80%
“…However, all attempts to consider p-type charge carrier localization on the nearest neighboring sites around a given hole failed. The atomistic computer simulation studies [19] confirmed that such situation is, indeed, very unlikely for perovskiterelated lattices due to coulombic repulsion forces. The holes in undoped La 2 NiO 4+d may, therefore, have 5 actual energy levels, which originate from the interaction with other holes located in the second coordination sphere (Fig.…”
Section: Defect Interaction In La 2 Nio 4+dmentioning
confidence: 80%
“…In this way, the co-firing of a CMR consisting of a thick porous support and a thin dense membrane seems to constitute a good solution to meet this requirement. [4][5][6][7][8][9][10][11][12] The porous support provides suitable mechanical properties, while the dense membrane separates oxygen from air by ionic oxygen conduction. A catalyst layer can be added to improve the surface exchange and the conversion of methane on the surface of the membrane.…”
Section: Introductionmentioning
confidence: 99%
“…13 La 0.8 Sr 0.2 Fe 0.7 Ga 0.3 O 3−δ material has been selected for the dense membrane, because of the high performance in terms of oxygen permeation and a good chemical and dimensional stability over a large range of temperature and oxygen partial pressure. 5,6,9,10 However, gallium-doped ferrites are very expensive due to the cost of Ga.…”
Section: Introductionmentioning
confidence: 99%
“…[5,21] A greater fundamental knowledge of defect clustering and vacancy migration on the atomic level in CaTiO 3 -based systems is required to understand the rather complex structure-property relationships. Atomistic simulation techniques are wellsuited to studying defect properties on this scale, as demonstrated in previous simulations of oxide-ion and proton conductors such as LaGaO 3 [22,23] and BaCeO 3 . [24,25] Herein, we have employed a wide-ranging sequence of atomistic simulations to address a number of important topics concerning pure and substituted CaTiO 3 , with particular attention paid to its application as a mixed-conducting membrane.…”
Section: Introductionmentioning
confidence: 99%