Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films

Chen, Wei-Chung; Feldman, Bernard J.

doi:10.1016/0038-1098(81)90745-6

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…This result is in direct contrast with single-crystal 2H-WSe 2 for which the only observable PL is derived from the indirect bandgap transition at 850 nm (labeled I) . The small PL intensity from the A exciton peak of the nanoplates could be due to defects within the MX 2 plates that are allowing for a relaxation followed by radiative recombination that can lead to enhanced PL intensity. , Evidence of this relaxation to a defect state can be observed when comparing the PL data to optical absorbance data (Figure S7), as the A exciton peak in the PL spectra is red-shifted from that in the absorbance spectra . Further work is required to fully understand the source of the PL in the hexagonal nanoplates.…”

Section: Resultsmentioning

confidence: 99%

Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations

et al. 2017

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The interesting and tunable properties of layered metal dichalcogenides heavily depend on their phase and layer stacking. Here, we show and explain how the layer stacking and physical properties of WSe are influenced by screw dislocations. A one-to-one correlation of atomic force microscopy and high- and low-frequency Raman spectroscopy of many dislocated WSe nanoplates reveals variations in the number and shapes of dislocation spirals and different layer stackings that are determined by the number, rotation, and location of the dislocations. Plates with triangular dislocation spirals form noncentrosymmetric stacking that gives rise to strong second-harmonic generation and enhanced photoluminescence, plates with hexagonal dislocation spirals form the bulk 2H layer stacking commonly observed, and plates containing mixed dislocation shapes have intermediate noncentrosymmetric stackings with mixed properties. Multiple dislocation cores and other complexities can lead to more complex stackings and properties. These previously unobserved properties and layer stackings in WSe will be interesting for spintronics and valleytronics.

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Section: Resultsmentioning

confidence: 99%

Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations

et al. 2017

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Tail–tail luminescence in amorphous silicon

Rauscher¹,

Pfleiderer²,

Bullemer³

1983

Phys. Stat. Sol. (a)

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Experiments and a model calculation of the stationary photoluminescence (PL) in hydrogenated amorphous silicon are presented. The model is based on the concept of geminate recombination and considers the tunneling of the photogenerated carriers from shallow to deep localized states as a process competitive with the radiative recombination. The activation energy of the temperature‐dependent PL quantum efficiency is the sum of the electron–hole binding energy and of the trapping energy of one of both the charge carriers. This model allows a complete interpretation of the decrease of PL quantum efficiency, the shift of the PL spectrum towards lower photon energies, and of the increase in the FWHM with rising temperature. The long‐wavelength PL (0.8 eV ≦ ħωPL ≦ 1.0 eV) is found to be characteristic of the density of localized midgap states.

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Electronic structure of the pseudo-one-dimensional superconductor Tl2Mo6Se6 according to SCF scattered-wave Xα computations

Beuze

Lissillour

Chermette

et al. 1982

Solid State Communications

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Defect induced red shift in the luminescence spectra of amorphous silicon-hydrogen films

Cited by 4 publications

References 5 publications

Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations

Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations

Tail–tail luminescence in amorphous silicon

Electronic structure of the pseudo-one-dimensional superconductor Tl2Mo6Se6 according to SCF scattered-wave Xα computations

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