Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

Jiang, De-Sheng; Ramsteiner, M.; Tews, H.; Graber, A.; Averbeck, R.; Riechert, H.

doi:10.1063/1.120738

Cited by 16 publications

(11 citation statements)

References 15 publications

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“…When the temperature is raised, the 247 cm −1 peak becomes strong at first but then becomes weak again at above room temperature and disappears at about 500 K. References [1,3] reported an electronic Raman scattering (ERS) mode at 247 cm −1 in GaN, with frequency consistent with what we observed. They attributed it to the 1S → 3S transition of shallow donors.…”

Section: The Defect and Impurity Modessupporting

confidence: 90%

“…The differences between the E 2 and A 1 (LO) modes in two samples are discussed and explained by the interplay of electronic excitations and lattice vibration. Apart from the host phonon modes, a peak at 247 cm −1 , which is very consistent with the 30.7 meV reported in [3], appears both in the spectra of undoped GaN and Mg-doped GaN at low temperature. The origin of this peak is discussed.…”

Section: Introductionsupporting

confidence: 80%

“…Siegle et al [2] claimed that these peaks are only observable for GaN on GaAs. Subsequently, Jiang et al [3] reported these peaks in MBE GaN layers grown on both sapphire and GaAs substrates. Because the intensity of these lines decreases with increasing temperature and the lines disappear at room temperature, Ramsteiner et al attributed these lines to the electronic excitation of donors.…”

Section: Introductionmentioning

confidence: 96%

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Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

et al. 2006

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The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at room temperature and low temperature. The differences of E 2 and A 1 (LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron-phonon interaction are the possible origins. A peak at 247 cm −1 is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mgdoped GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced vibrational mode.

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Section: The Defect and Impurity Modessupporting

confidence: 90%

Section: Introductionsupporting

confidence: 80%

Section: Introductionmentioning

confidence: 96%

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Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

et al. 2006

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“…The resonant scattering reflects the polar characteristics of the Ga-N bond. Jiang et al 9 have studied the electronic Raman scattering by shallow donors in resonance with yellow luminescence in GaN. In recent years, publications describing the effect of strain on optical properties on GaN heteroepitaxial layers have appeared.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy

Tripathy

Soni

Asahi

et al. 1999

Journal of Applied Physics

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GaN layers were grown on C-, A-, R-, and M-plane sapphire substrates by the electron cyclotron resonance-molecular beam epitaxy technique. We addressed a combined utilization of Raman spectroscopy, photoluminescence ͑PL͒ and reflectance measurements to investigate the optical properties of these high-quality GaN layers. First order optical phonons of A 1 , E 1 , and E 2 symmetries were observed in the Raman spectra and the peaks are indicative of the wurtzite crystal structure. All three intrinsic exciton transitions arising from A, B, and C interband transitions were observed in reflectance measurements. The PL spectra were dominated by A and B free exciton transitions and the recombination of an exciton bound to a neutral donor. The experimental data clearly revealed a thickness-dependent change of the biaxial strain in the GaN layers grown on ͑0001͒ C-plane sapphire. The residual strain induced in these layers was found to have a strong influence in determining the energies of the excitonic transitions. Resonant Raman scattering measurements were performed by temperature tuning of fundamental gap in 1.0 m GaN on C-plane sapphire. The influence of epitaxial strain in free exciton properties of GaN layers grown on various orientations of sapphire has been discussed based on the PL and reflectance results. The exciton binding energies were estimated in the GaN layers grown on C-, A-, and M-plane sapphire substrates. Polarized Raman measurements were performed on GaN layers grown on various orientations of sapphire and we observed quasipolar modes of both E 1 and A 1 symmetries. An additional broad photoluminescence band centered around 2.74 eV was observed in the GaN layers grown on R-and M-plane sapphire substrates. The defect induced Raman scattering in resonance with this band shows strong Raman scattering peaks resulting from the transition between energy levels of donor species or defect states.

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“…According to [6], these peaks are only present in the spectra of GaN and GaAs. It was reported in [7] that these peaks were also characteristic of GaN layers grown by molecular beam epitaxy on sapphire and GaAs substrates. Their intensity decreased as the tem perature increased, and they completely disappeared at room temperature.…”

Section: Introductionmentioning

confidence: 92%

A computer study of the Raman spectra of the (GaN)129, (SiO2)86, and (GaN)54(SiO2)50 nanoparticles

Галашев

2012

Russ. J. Phys. Chem. B

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Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

Cited by 16 publications

References 15 publications

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy

A computer study of the Raman spectra of the (GaN)129, (SiO2)86, and (GaN)54(SiO2)50 nanoparticles

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