Defect‐Induced Localized Excitons and Raman Modes in Monolayer MoSe2
Zhiyuan Tang,
Siwei Luo,
Gencai Guo
et al.
Abstract:In monolayer transition metal dichalcogenides, defects, such as chalcogen vacancies, play an important role in determining their properties. Herein, monolayer MoSe2 with varying Se vacancy concentrations is successfully prepared by adjusting the amount of the precursors during the chemical vapor deposition synthesis. The Raman and low‐temperature photoluminescence spectra are systematically studied at varying defect concentrations. Furthermore, it is found that Se vacancies introduce in‐gap electronic states, … Show more
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