2022
DOI: 10.1103/physrevb.106.l140503
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Defect-induced electronic smectic state at the surface of nematic materials

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Cited by 3 publications
(1 citation statement)
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“…At the same time, band renormalizations, as inferred from ARPES data 3 , 34 , indicate that correlations are getting suppressed with increasing S concentration. Therefore, isoelectronic S substitution for Se could push the system into a region of diverging compressibility, leading to instability with respect to either phase separation or incommensurate CO. From a different theoretical perspective, an emerging ground state with unidirectional charge modulations could be related to the generic presence of anisotropic defects at the surface, such as atomic terrace step-edges 35 . In this picture, the nematic order parameter coupled to a weakly-screened uniaxial strain field, induced by the surface disorder, results in the stabilization of a smectic phase.…”
Section: Discussionmentioning
confidence: 99%
“…At the same time, band renormalizations, as inferred from ARPES data 3 , 34 , indicate that correlations are getting suppressed with increasing S concentration. Therefore, isoelectronic S substitution for Se could push the system into a region of diverging compressibility, leading to instability with respect to either phase separation or incommensurate CO. From a different theoretical perspective, an emerging ground state with unidirectional charge modulations could be related to the generic presence of anisotropic defects at the surface, such as atomic terrace step-edges 35 . In this picture, the nematic order parameter coupled to a weakly-screened uniaxial strain field, induced by the surface disorder, results in the stabilization of a smectic phase.…”
Section: Discussionmentioning
confidence: 99%