Defect induced anti-thermal quenching of Cr3+ doped Zn1-Li2Ga2O4 for plant growth LED

Blueshift and Photoluminescence Enhancement in Broadband Near‐Infrared Emitting Phosphor NaSr2(Al/Ga)Ge5O14: Cr3+ Dependence on the Sc/In Substitution

“…[ 32,33 ] Furthermore, because Cr 3+ ions have a binding energy of 585.9 eV (Figure 2e), the NIR luminescence is unlikely to originate from Cr 4+ ions. [ 34,35 ] Note that the absorption peak intensities of NSAGO: 0.07Cr 3+ and NSGGO: 0.07Cr 3+ at 435 and 615 nm in the DR spectra are different from those of NSSGO: 0.07Cr 3+ and NSIGO: 0.07Cr 3+ . NSAGO: 0.07Cr 3+ and NSGGO: 0.07Cr 3+ have stronger absorption intensities than NSSGO: 0.07Cr 3+ and NSIGO: 0.07Cr 3+ , implying greater absorption from other luminescence centers of the Cr 3+ ions.…”

Broadband La2LiSbO6: Cr3+ Phosphors with Double Luminescent Centers for NIR pc-LEDs

“…This conclusion can also be further confirmed by EDS analysis, which will be shown later. According to the spectrum of a high-resolution Cr 2p X-ray electron spectrometer, the peak Cr 2p 3/2 is located at 576.28 eV, indicating that Cr still exists in the form of the trivalent state (the Cr 2p 3/2 binding energy of Cr 3+ oxide is about 576 eV, while the Cr 2p 3/2 binding energy of Cr 6+ oxide is about 579 eV 18 ). In addition, the distinction between Cr 3+ and Cr 4+ will be explained later in the DRS.…”

Glass-based LED system for indoor horticulture: enhanced plant growth through Sm3+ and Tm3+ co-doped luminescent glasses

“…Inorganic photoluminescent materials are becoming increasingly popular for plant growth LEDs because of their unique optical and emission properties. 13–36 However, usually their instability remains a significant challenge, despite their well-suited spectral properties. Therefore, it is usually critical to encapsulate these photoluminescent materials in a chemically, thermally, and mechanically stable environment to ensure their efficient performance.…”