Hydrogen in Semiconductors 1991
DOI: 10.1016/b978-0-444-89138-9.50026-7
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Defect generation during plasma treatment of semiconductors

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Cited by 2 publications
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“…Even though the MOF is engraved by argon plasma treatment, the damaged ligand probably remains on the surface owing to the inertness of the noble gas atoms. 25 In sharp contrast, the proportions of C and O on the surface of MOF-H 2 are decreased by about 38 and 54%, respectively. This phenomenon explains the improvement of its BET surface area, that is, the active hydrogen ions (H 3 + ) could remove the ligands and introduce defects on the surface.…”
Section: Resultsmentioning
confidence: 93%
“…Even though the MOF is engraved by argon plasma treatment, the damaged ligand probably remains on the surface owing to the inertness of the noble gas atoms. 25 In sharp contrast, the proportions of C and O on the surface of MOF-H 2 are decreased by about 38 and 54%, respectively. This phenomenon explains the improvement of its BET surface area, that is, the active hydrogen ions (H 3 + ) could remove the ligands and introduce defects on the surface.…”
Section: Resultsmentioning
confidence: 93%