Defect-free nucleation of silicon on {111} silicon surfaces

Shimbo, M.; Nishizawa, Jun–ichi; Terasaki, Takeshi

doi:10.1016/0022-0248(74)90068-2

Cited by 39 publications

(14 citation statements)

References 6 publications

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“…In comparison, hillock densities of several hundred per square centimeter were reported for the silicon tetrachloride technique even when the growth t e m p e r ature was raised to 1200~ (14). These densities are tolerable for the application of this growth technique to the fabrication of devices.…”

Section: Ma~t I982mentioning

confidence: 98%

“…(14) have reported an initial increase in hillock density with increasing silicon tetrachloride concentration followed by a decrease in hillock density at higher silicon tetrachloride concentrations. These hillocks were prominent in thick epitaxial layers grown on all three of the crystallographic orientations.…”

Section: Ma~t I982mentioning

confidence: 99%

“…However, Nishizawa and co-workers (14,15) have reported that the density of hillocks increases with increasing SIC14 concentration only at the lower concentrations. In these papers, the a u t h o r s h a v e reported that t h e hillock density decreases with increasing deposition temperature.…”

mentioning

confidence: 96%

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Defect Control during Silicon Epitaxial Growth Using Dichlorosilane

Baliga

1982

J. Electrochem. Soc.

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The incidence of hillocks and stacking faults in thick silicon epitaxial layers grown by using dichlorosilane as a source has been examined as a function of the growth parameters for the (111), (110), and (100) orientations. It was determined that the hillock and stacking fault densities decrease with increasing growth temperature and decreasing dichlorosilane flow. A continual decrease in the hillock density was observed with decreasing growth rate, without the observation of a critical growth rate above which hillocks form in the case of silicon epitaxy using silicon tetrachloride. Stacking faults were invariably found at every hillock site. For epitaxial growth performed using dichlorosilane at 1160~ with a growth rate of 1.5 microns per minute, thick epitaxial layers could be grown with hillock and stacking fault densities of less than 10/cm ~ for all three surface orientations. Since this defect density is significantly lower than that observed in the silicon tetrachloride system, the dichlorosilane epitaxial growth process is more suitable for the growth of thick epitaxial layers which require relatively high growth rates.* Electrochemical Society Active Member.

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Section: Ma~t I982mentioning

confidence: 98%

Section: Ma~t I982mentioning

confidence: 99%

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Defect Control during Silicon Epitaxial Growth Using Dichlorosilane

Baliga

1982

J. Electrochem. Soc.

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“…The second aspect has received the most attention in the literature (1)(2)(3); the growth process is dri ven by the sup.ersaturati on of the surface with silicon adatoms but does not depend upon their source (i.e. whether produced from a CVD process or by condensation of silicon vapor).…”

Section: Introductionmentioning

confidence: 99%

The surface chemistry of the thermal cracking of silane on silicon (111)

Farnaam

Olander

1984

Surface Science

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The kinetics of the thermal decomposition of silane gas during epitaxial growth on the (111) face of single crystal silicon were studied by modulated molecular beam mass spectrometry over the temperature range of 1000 K -1440 K and with beam intensities from 2 x 20 15 to 2 x 10 16 molecules/cm 2 -s.An abrupt change in the apparent reaction probability was observed at -1130 K, coinciding with a known surface structural transformation at about the same temperature. The molecular beam data for temperatures higher than 1130 K were used for construction of a reaction model. Additional experiments were conducted to fix certain features of the reaction mechanism. An attempt was made to measure the rate constant for desorption of unreacted silane molecules from the surface. The residence time of silane on the surface was below the sensitivity limit of the technique « 5 ~s), which means that SiH 4 desorption is not rate-limiting. Application of a simultaneous modulated beam of SiH4 and a steady beam of SiD4 did not produce HD molecules, thus ruling out hydrogen atom production in the surface reaction mechanism. According to the proposed model, silane molecules which do not reflect from the surface undergo a branched reaction with two types of sites on the surface, producing two bound SiH 2 molecules in each chemisorption event. Subsequent surface decomposition of the adsorbed SiH 2 molecules occur with different pre-exponential factors,' although with similar activation energies of about 17 kcal/mole for the two types of sites.

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“…A useful distinction can be made between nearly hexagonal superlattice overlaid bilayers and the isolated triangular growth pyramids which have been observed 19 to nucleate homogeneously on Si(lll) surfaces during vapor deposition. The former situation, obtained by annealing a rough surface, resembles a two-dimensional liquidsolid transition.…”

Section: 55+ Bmentioning

confidence: 98%

New Model for Reconstructed Si(111) 7 × 7 Surface Superlattices

Phillips¹

1980

Phys. Rev. Lett.

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Superlattices of disjoint bilayer atomic microdomains stabilized by epitaxial misfit strain energies are proposed to account for n*n tyi =5 at lower X, n =7 at higher T) surface structures of both Si on Si (111) and Sn on Ge(lll). The microdomain model accounts well for the relative stability of Si(lll) 7x 7 against hydrogenation and chlorination and is energetically more favorable than the original Lander model of 2><2 building blocks centered on point vacancies.

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Defect-free nucleation of silicon on {111} silicon surfaces

Cited by 39 publications

References 6 publications

Defect Control during Silicon Epitaxial Growth Using Dichlorosilane

Defect Control during Silicon Epitaxial Growth Using Dichlorosilane

The surface chemistry of the thermal cracking of silane on silicon (111)

New Model for Reconstructed Si(111) 7 × 7 Surface Superlattices

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