Defect-free Fabrication for Single Crystal Silicon Substrate by Chemo-Mechanical Grinding

Zhou, Libo; Eda, Hiroshi; Shimizu, Jun; Kamiya, Sumio; Iwase, Hisao; Kimura, Shunichiro; Sato, Hisashi

doi:10.1016/s0007-8506(07)60424-7

Cited by 77 publications

(48 citation statements)

References 14 publications

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“…This solid reaction dissociated Si atoms from its bulk material under certain pressure and temperature. The evaluation of Si surface and subsurface suggested that no defects like plastic flows and dislocations were developed during CMG and ground Si surface remains as a single crystal structure after CMG [12,13].…”

Section: Basic Concept Of Materials Removal At Cmgmentioning

confidence: 99%

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Research on chemo-mechanical grinding of large size quartz glass substrate

Zhou

Shiina

Qiu

et al. 2009

Precision Engineering

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Section: Basic Concept Of Materials Removal At Cmgmentioning

confidence: 99%

“…CMG is potentially emerging defect-free machining process which combines the advantages of fixed-abrasive process and CMP. So far, CMG has been successfully applied into machining of single crystal silicon wafer [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Research on chemo-mechanical grinding of large size quartz glass substrate

Zhou

Shiina

Qiu

et al. 2009

Precision Engineering

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“…Various efforts have been made to improve defects in silicon parts. 4,5 In order to improve the machinability of silicon parts, scholars have utilized different means in an attempt to understand the deformation, fracture, and microstructural changes of silicon. 6,7 *Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Weakening of the anisotropy of surface roughness in ultra-precision turning of single-crystal silicon

Wang

Zheng

2015

Chinese Journal of Aeronautics

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Please cite this article as: W. Minghai, W. Ben, Z. Yaohui, Weakening of the anisotropy of surface roughness in ultra-precision turning of single-crystal silicon, (2015), doi: http://dx. AbstractUltra-precision machining causes materials to undergo a greatly strained deformation process in a short period of time. The effect of shear strain rates on machining quality, in particular on surface anisotropy, is a topic deserving of research that has thus far been overlooked. This study analyzes the impact of the strain rate during the ultra-precision turning of single-crystal silicon on the anisotropy of surface roughness. Focusing on the establishment of cutting models considering the tool rake angle and the edge radius, this is the first research that takes into account the strain rate dislocation emission criteria in studying the effects of the edge radius, the cutting speed, and the cutting thickness on the plastic deformation of single-crystal silicon. The results of this study show that the uses of a smaller edge radius, faster cutting speeds, and a reduced cutting thickness can result in optimally uniform surface roughness, while the use of a very sharp cutting tool is essential when operating with smaller cutting thicknesses. A further finding is that insufficient plastic deformation is the major cause of increased surface roughness in the ultra-precision turning of brittle materials. On this basis, we propose that the capacity of single-crystal silicon to emit dislocations be improved as much as possible before brittle fracture occurs, thereby promoting plastic deformation and minimizing the anisotropy of surface roughness in the machined workpiece.

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“…In recent years, a great effort was directed towards developing a finishing technology, which combines the advantages of both diamond grinding and CMP [13][14][15]. Zhou et al [13,14] pioneered this work and developed a chemical mechanical grinding (CMG) process for the planarization of silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

“…Zhou et al [13,14] pioneered this work and developed a chemical mechanical grinding (CMG) process for the planarization of silicon wafers. It is believed that in a CMG process, silicon was removed by mechanical abrasion of the material that is softened through the chemical reaction between abrasives and silicon.…”

Section: Introductionmentioning

confidence: 99%

Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel

Dong

Gao

Huang

et al. 2015

Int J Adv Manuf Technol

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A chemical mechanical grinding (CMG) wheel was developed for planarization of silicon wafers, which consists of magnesium oxide (MgO) abrasives and calcium carbonate (CaCO 3 ) additives, mixed with 25 % weight percentage of magnesium chloride (MgCl 2 ) solution. It was shown that chemical reactions occurred during the grinding process, which formed a softened layer on the top of silicon substrate. The reactants could be much more easily removed by mechanical abrasion than the removal of Si phase itself. The newly developed wheel was able to produce a similar surface integrity to that obtained from chemical mechanical polishing (CMP), i.e., the CMG achieved a surface roughness of 0.5 nm in R a and a subsurface damage layer of 13 nm thick. The CMG process developed thus has great potential for back grinding or thinning of silicon wafers in order to replace CMP.

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Defect-free Fabrication for Single Crystal Silicon Substrate by Chemo-Mechanical Grinding

Cited by 77 publications

References 14 publications

Research on chemo-mechanical grinding of large size quartz glass substrate

Research on chemo-mechanical grinding of large size quartz glass substrate

Weakening of the anisotropy of surface roughness in ultra-precision turning of single-crystal silicon

Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel

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