Abstract:Nickel, the related defect distribution of as-grown nickel-incorporated p-type Czochralski-grown silicon crystals, and its effect on the gate oxide reliability were investigated with respect to the boron doping concentration. The segregation of nickel at the surface was more likely in the doping range of 5.5–7.4 × 1014 cm−3 than in the doping range of 1.1–1.7 × 1015 cm−3, which was due to the active formation of Ni–B pairs in the crystal with a higher boron doping concentration. The formation of surface defect… Show more
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