2008
DOI: 10.1016/j.jcat.2008.03.018
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Defect formation and the water–gas shift reaction on β-Ga2O3

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Cited by 40 publications
(56 citation statements)
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“…For MgGa and PdMgGa, the presence of Pd leads to an increase in the total HTR hydrogen consumption and to a decrease in temperature from 736 to 695 K. In both samples, CO was detected by MS. Thus, at sufficiently high temperature CO 2 from decarboxylation of the interlayer carbonate anions undergoes rWGS on the reducible oxides [16]. In case of PdMgGa the hydrogen uptake due to rWGS and support reduction overlaps with IMC formation (Fig.…”
Section: Tpr and Ms Measurementsmentioning
confidence: 93%
“…For MgGa and PdMgGa, the presence of Pd leads to an increase in the total HTR hydrogen consumption and to a decrease in temperature from 736 to 695 K. In both samples, CO was detected by MS. Thus, at sufficiently high temperature CO 2 from decarboxylation of the interlayer carbonate anions undergoes rWGS on the reducible oxides [16]. In case of PdMgGa the hydrogen uptake due to rWGS and support reduction overlaps with IMC formation (Fig.…”
Section: Tpr and Ms Measurementsmentioning
confidence: 93%
“…Recently, the influence and role of oxygen defects on β-Ga 2 O 3 samples was investigated for the (reverse) water-gas shift reaction [29,30] by systematically studying the interaction with H 2 , CO 2 , CO, and H 2 O after different pretreatments. In another work, Ga 2 O 3 supported on TiO 2 showed remarkable activity for steam reformingmof dimethylether [31].…”
Section: Introductionmentioning
confidence: 99%
“…Pure In 2 O 3 is highly CO 2 -selective, both ZnO and Ga 2 O 3 are not [11,13]. Partly this is also due to their activity in the reverse water-gas shift reaction [14,15] , which renders an extension of the studies to the fourth main group of the periodic system useful. Contrary to SnO 2 , structural information on GeO 2 thin films is scarce and mainly limited to the preparation of GeO 2 nanomaterials [16][17][18].…”
Section: Introductionmentioning
confidence: 99%