Defect formation and electronic structure regulated by strain engineering in ReS2

Min, Yuho; Wang, A.Q.; Ren, Xuemei; Liu, L.Z.; Wu, Xiaohong

doi:10.1016/j.apsusc.2017.09.080

Cited by 11 publications

(2 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Energy band engineering of ReX 2 , which is critical to fulfilling the requirements of diverse optoelectronics, has been widely explored via strain, doping, molecular modification or high pressure. [ 48–51 ] For instance, theory calculations and experiments have shown that both the compressive and tensile strain applied in different lattice directions of ReX 2 can modulate the electronic band structures, and the bandgap is monotonically reduced with increasing strain in each direction. In addition, the high pressure can induce metallization and superconducting phase in ReS 2 and ReSe 2 with a band overlap mechanism.…”

Section: Structure and Properties Of Rex2mentioning

confidence: 99%

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Chen

Yang

et al. 2020

Advanced Science

View full text Add to dashboard Cite

The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX 2 (X = S, Se) has attracted significant interest regarding its unusual 1T′ structure and extraordinary properties in various fields during the past 7 years. For instance, ReX 2 possesses large bandgaps (ReSe 2 : 1.3 eV, ReS 2 : 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T′ structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.

show abstract

Section: Structure and Properties Of Rex2mentioning

confidence: 99%

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Chen

Yang

et al. 2020

Advanced Science

View full text Add to dashboard Cite

show abstract

“…, where E c (E v ) and m dp (m de ) are the energies of conduction band minima (valence band maxima) and effective mass of hole (electron) at the Γ point of the first Bril-louin zone. [44] According to the previous reports, [45,46] E c , E v , m dp and m de are all dependent on the loaded strain. Detailed quantitative analysis of the V-shape relationship between E f and strain needs to further consider the in-plane anisotropic electronic properties, which is still ongoing and will be reported in the near future.…”

Section: -2mentioning

confidence: 81%

Unveiling localized electronic properties of ReS₂ thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy

Luo

Zhang³

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

The electronic properties of two-dimensional (2D) material is strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in few hundreds nanometers, which is hard to characterize the localized electronic properties of 2D materials at the nanoscale. Herein, tip-enhanced Raman spectroscopy(TERS) was proposed to combine with KPFM to break this restriction. TERS scan was conducted on ReS2 bubbles deposited on rough Au thin film to obtain strain distribution by using the Raman peak shift. The localized contact potential difference (CPD) was inversely calculated with a higher spatial resolution by using strain measured by TERS and CPD-strain working curve obtained using conventional KPFM and atomic force microscopy(AFM). This method enhances the spatial resolution of CPD measurement and can be potentially used to characterize the localized electronic properties of 2D materials.

show abstract

Effect of Morphology on the Drug Sustained‐Release Performance of HA/β‐TCP Composite

et al. 2022

View full text Add to dashboard Cite

Hydroxyapatite/tricalcium phosphate (HA/β-TCP) has been widely studied as a drug carrier, but the drug loading and release rate of the composites with different morphology significantly vary. In this paper, needle-shaped, rod-shaped, and ordered porous HA/β-TCP composite was prepared by chemical co-precipitation method, and ibuprofen (IBU) was used as a drug model to study the sustained-release properties of IBU in vitro. The results showed that morphology of the HA/ β-TCP composite had a significant effect on the drug loading of IBU. The IBU loading of the ordered porous composite was as high as 101.3 mg/g, which was 2.2 times and 3.46 times higher than that of the rod-shaped and needle-shaped composite to IBU, respectively. The drug release test of IBU showed that the release rate of the ordered porous HA/β-TCP to IBU was slower than that of the rod-shaped and needle-shaped composite in the initial 10 h, and reached the drug release equilibrium after the subsequent 30 h. The cumulative release of the ordered porous HA/β-TCP composite to IBU reached 83.79 %, which was significantly smaller than that of the needle-shaped and the rod-shaped, showing better slow-release performance for IBU. The ordered porous HA/β-TCP composite have great application potential in quantitative drug delivery systems.

show abstract

Defect formation and electronic structure regulated by strain engineering in ReS2

Cited by 11 publications

References 32 publications

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Unveiling localized electronic properties of ReS₂ thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy

Effect of Morphology on the Drug Sustained‐Release Performance of HA/β‐TCP Composite

Contact Info

Product

Resources

About

Defect formation and electronic structure regulated by strain engineering in ReS2

Cited by 11 publications

References 32 publications

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Unveiling localized electronic properties of ReS2 thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy

Effect of Morphology on the Drug Sustained‐Release Performance of HA/β‐TCP Composite

Contact Info

Product

Resources

About

Unveiling localized electronic properties of ReS₂ thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy