2022
DOI: 10.7498/aps.71.20221612
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Defect evolution in Y<sub>0.5</sub>Gd<sub>0.5</sub>Ba<sub>2</sub>Cu<sub>3</sub>O<sub>7–<i>δ</i></sub> superconducting layer irradiated by H<sup>+</sup> ions

Abstract: <sec>In order to further improve the superconducting current carrying capacity of RE-Ba-Cu-O coated conductor under the action of strong magnetic field, ion irradiation is used to generate the pinning centers of introduced magnetic flux in the RE-Ba-Cu-O coated conductor. In this work, the H<sup>+</sup>-ion irradiation of second-generation high-temperature superconductor RE-Ba-Cu-O strip is carried out by using the 320 kV high charge state ion synthesis research platform. Doppler broadened sl… Show more

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“…对两种带材辐照前后的样品进行了拉曼光谱测试, 以考察低、高(分别为5×10 14 和5×10 16 ions/cm 2 ) [41] , 即 115 cm -1 处 的 [42] . 在 剂 量 为 5×10 14 ions/cm 2 时, 两种带材的超导特征峰峰位和峰形均 无明显变化, 这表明该剂量下, 辐照缺陷对两种带 材晶体结构的影响较小; 剂量增至5×10 16 ions/cm 2 时, 两种带材的超导特征峰消失、出现了极高的阳 离子无序(CD)峰位, 且峰形极宽, 这表明该剂量下 辐照缺陷使得超导层晶格高度无序, 极大破坏了超 导电流的传导结构, 进而损害了带材的超导电性 [43] . 造成的逃逸型氧空位为He扩散提供通道, 加速其 形成He-空位复合体 [44] , 因此辐照空位形成能垒和 浓度决定了超导层中氦泡的尺寸和密度 [45] .…”
Section: He + 离子辐照后Eubco带材微观结构 的演化行为unclassified
“…对两种带材辐照前后的样品进行了拉曼光谱测试, 以考察低、高(分别为5×10 14 和5×10 16 ions/cm 2 ) [41] , 即 115 cm -1 处 的 [42] . 在 剂 量 为 5×10 14 ions/cm 2 时, 两种带材的超导特征峰峰位和峰形均 无明显变化, 这表明该剂量下, 辐照缺陷对两种带 材晶体结构的影响较小; 剂量增至5×10 16 ions/cm 2 时, 两种带材的超导特征峰消失、出现了极高的阳 离子无序(CD)峰位, 且峰形极宽, 这表明该剂量下 辐照缺陷使得超导层晶格高度无序, 极大破坏了超 导电流的传导结构, 进而损害了带材的超导电性 [43] . 造成的逃逸型氧空位为He扩散提供通道, 加速其 形成He-空位复合体 [44] , 因此辐照空位形成能垒和 浓度决定了超导层中氦泡的尺寸和密度 [45] .…”
Section: He + 离子辐照后Eubco带材微观结构 的演化行为unclassified