Metal
oxide pseudocapacitors are limited by low electrical and
ionic conductivities. The present work integrates defect engineering
and architectural design to exhibit, for the first time, intercalation
pseudocapacitance in CeO2–x
. An
engineered chronoamperometric electrochemical deposition is used to
synthesize 2D CeO2–x
nanoflakes
as thin as ∼12 nm. Through simultaneous regulation of intrinsic
and extrinsic defect concentrations, charge transfer and charge–discharge
kinetics with redox and intercalation capacitances together are optimized,
where reduction increases the gravimetric capacitance by 77% to 583
F g–1, exceeding the theoretical capacitance (562
F g–1). Mo ion implantation and reduction processes
increase the specific capacitance by 133%, while the capacitance retention
increases from 89 to 95%. The role of ion-implanted Mo6+ is critical through its interstitial solid solubility, which is
not to alter the energy band diagram but to facilitate the generation
of electrons and to establish the midgap states for color centers,
which facilitate electron transfer across the band gap, thus enhancing
n-type semiconductivity. Critically, density functional theory simulations
reveal, for the first time, that the reduction causes the formation
of ordered oxygen vacancies that provide an atomic channel for ion
intercalation. These channels enable intercalation pseudocapacitance
but also increase electrical and ionic conductivities. In addition,
the associated increased active site density enhances the redox such
that the 10% of the Ce3+ available for redox (surface only)
increases to 35% by oxygen vacancy channels. These findings are critical
for any oxide system used for energy storage systems, as they offer
both architectural design and structural engineering of materials
to maximize the capacitance performance by achieving accumulative
surface redox and intercalation-based redox reactions during the charge/discharge
process.