2016
DOI: 10.1016/j.solmat.2016.04.021
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Defect engineering of ZnS thin films for photoelectrochemical water-splitting under visible light

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Cited by 77 publications
(31 citation statements)
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“…For instance, Kurnia et al fabricated Zn vacancies in ZnS by a pulsed laser deposition method in a N 2 atmosphere. [ 96 ] The optimum photoanode exhibited an enhanced J ph of 1.6 mA cm −2 at 1.0 V versus Ag/AgCl compared to the pristine ZnS photoanode. DFT calculation was performed to investigate the electronic structure of ZnS with Zn vacancies.…”
Section: Strategies For Improving Pec Performance Of 2d Photoanodesmentioning
confidence: 99%
“…For instance, Kurnia et al fabricated Zn vacancies in ZnS by a pulsed laser deposition method in a N 2 atmosphere. [ 96 ] The optimum photoanode exhibited an enhanced J ph of 1.6 mA cm −2 at 1.0 V versus Ag/AgCl compared to the pristine ZnS photoanode. DFT calculation was performed to investigate the electronic structure of ZnS with Zn vacancies.…”
Section: Strategies For Improving Pec Performance Of 2d Photoanodesmentioning
confidence: 99%
“…Hao et al investigated the vacancy‐dependent band structure and photocatalytic activity in ZnS (Zn‐deficient) prepared by using Na 2 S as the sulfur source during hydrothermal reaction . Kurnia et al reported the ZnS thin film with a bandgap of 2.4 eV prepared via gas‐assisted pulsed laser deposition . And a much higher photocurrent density (up to ≈1.5 mA cm −2 ) under visible light irradiation during photoelectrochemical water splitting was observed due to a better light absorption.…”
Section: Applicationsmentioning
confidence: 99%
“…To enhance photocatalytic activity, transition metal-doped ZnS (Cu, Ni, Mo) or doping with GaN were investigated as potentially efficient photocatalysts to generate H 2 under visible light irradiation [180][181][182]. However, due to the remaining challenges of dopant introduction [181,[183][184][185][186] an alternative method by controlling defects in nanostructured ZnS has been exploited through PLD to enhance the overall PEC properties of ZnS [187]. The fabrication of ZnS-based heterojunctions with other semiconductors for more advanced designs has been considered to enhance PEC performance for water splitting.…”
Section: Ferroelectric Chalcogenides (1) Cdsmentioning
confidence: 99%