Defect engineering of oxygen vacancies in SnOx electron transporting layer for perovskite solar cells

Jiang, Ershuai; Jin, Yan; Ai, Yuqian; Li, Nan; Yan, Baojie; Zeng, Yuheng; Sheng, Jiang; Ye, Jichun

doi:10.1016/j.mtener.2019.03.005

Cited by 24 publications

(21 citation statements)

References 29 publications

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“…From the transmittance results, as shown in Figure S3, Supporting Information, the optical bandgap ( E g ) of n ‐SnO 2 and n ‐SnO 2 /InP/ZnS QDs were determined to be 4.1 and 4.04 eV, respectively. The E g values are close to the reported value of 3.98 eV for thin n ‐SnO 2 films 37. Moreover, the electrical conductivities of ETLs was evaluated by the dark J − V characteristics of the electron‐only device with a structure of ITO/ n ‐SnO 2 (or n ‐SnO 2 /InP/ZnS QDs)/Ag which has highly conductive ITO and Ag metal as electrodes to ensure good Ohmic contact (Figure 3b).…”

Section: Resultssupporting

confidence: 88%

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Peng

Yan

Yang

et al. 2020

Adv Elect Materials

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N‐type tin oxide (n‐SnO2) nanoparticle film has shown great potential as an electron transport layer (ETL) in fabricating highly efficient organic solar cells (OSCs) due to its low‐temperature preparation and high electrical conductivity. However, surface defects on the n‐SnO2 nanoparticles generated by the solution‐processed approach seriously limit the performance of the OSCs with n‐SnO2 ETL. InP/ZnS quantum dots (QDs) are employed to passivate the surface defects of n‐SnO2 ETL, and an inverted OSC using PM6:Y6 as active layer achieves a power conversion efficiency (PCE) of 15.22%, much higher than that of a device based on pure n‐SnO2 ETL (13.86%). The synergistic enhancement of the device open‐circuit voltage (Voc) and fill factor (FF) is attributed to the improved morphologies of PM6:Y6 layer on the QDs/ETL, increased charge extraction and collection efficiency, and decreased monomolecular recombination caused by the defect‐trapped charge carriers in the solar cell. Moreover, the inverted device with n‐SnO2/InP/ZnS QDs ETL show a much higher stability than that of the conventional PEDOT:PSS based one. This work presents a promising QDs passivation strategy on n‐SnO2 ETL to develop efficient and stable OSCs.

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Section: Resultssupporting

confidence: 88%

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Peng

Yan

Yang

et al. 2020

Adv Elect Materials

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“…Oxygen has been shown to fill oxygen vacancies on the surface of TiO 2 or SnO 2 , either during the annealing process or upon oxygen plasma treatment which can be beneficial for the operation of PSCs. [231][232][233] Despite this, ZnO has often been introduced as an alternative metal oxide ETL due to its low processing temperature [170] and high electron mobility. [234] Unlike TiO 2 and SnO 2 , ZnO has been found to have undesirable side effects with MAPbI 3 where the nature of the ZnO surface leads to proton-transfer reactions at the ZnO/MAPbI 3 interface.…”

Section: Electron Transport Layermentioning

confidence: 99%

Ambient Fabrication of Organic–Inorganic Hybrid Perovskite Solar Cells

et al. 2020

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Unlike fossil fuels, the sun is an inexhaustible energy source that delivers more energy to the earth in 1 h than the entire planet consumes in one year. Energy can be harvested from the sun using photovoltaics (PV) and stored (e.g., batteries), meaning solar energy can be used as and when required. [3,4] Currently, the commercial PV market is dominated by single-junction crystalline silicon (c-Si) PV which deliver power conversion efficiencies (PCE) of over 26% under 1 Sun illumination (AM 1.5 standard). [5,6] Despite their high efficiencies, the fabrication of c-Si PV is nontrivial and lacks electronic tunability. Furthermore, the record efficiency for c-Si PV is 26.7% [5] which is very close to the theoretical limit of 29.4%. [7] This clearly indicates that c-Si PV is a mature technology and there is limited room for improvement. [8] Over the past two decades, third-generation solar cells such as dye-sensitized solar cells, [9,10] quantum dot solar cells, [11,12] organic solar cells, [13,14] and perovskite solar cells (PSCs) [15,16] have been developed as alternatives to c-Si technologies. Of these third-generation solar cells, single-junction PSCs have generated significant attention due to their intense visible to near-infrared absorptivity, [16-18] long diffusion lengths of the charge carriers, [19,20] high efficiency, [21,22] electronic and physical tunability, [23,24] and low manufacturing costs. [25,26] After the first report by Miyasaka's group in 2009, [27] the PCE for single junction devices increased considerably from 3.8% to 25.2%, [27,28] making it the fastest advancing PV technology to date. This has uniquely placed PSCs as the frontrunner technology to potentially replace or coexist with c-Si PV. The term "perovskite" refers to a group of compounds that share the same lattice structure as calcium titanium oxide (CaTiO 3). All PV perovskite materials have the general chemical formula ABX 3 , as illustrated in Figure 1a. Organic-Inorganic hybrid PSCs are typically made using an organic/ inorganic cation (A = methylammonium (MA) CH 3 NH 3 + , formamidinium (FA) CH 3 (NH 2) 2 + , or cesium), a divalent cation (B = Pb 2+ or Sn 2+) , [29] and an anion (X = Cl − , Br − , or I −), illustrated in Figure 1b. [16,30] A is surrounded by eight lead halide octahedra (B in the center of octahedra) and forms a cubic perovskite structure. When the size of A or/and X is changed, the structure of perovskite will distort. The Goldschmidt tolerance factor (t) [31] of perovskite is an empirical index for Organic-inorganic hybrid perovskite solar cells (PSCs) have attracted significant attention in recent years due to their high-power conversion efficiency, simple fabrication, and low material cost. However, due to their high sensitivity to moisture and oxygen, high efficiency PSCs are mainly constructed in an inert environment. This has led to significant concerns associated with the long-term stability and manufacturing costs, which are some of the major limitations for the commercialization of this cutting-edge tech...

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“…The optimized carrier density of SnO 2 films leads to PSCs with a champion stabilized PCE of 19.73%. Annealing SnO 2 films under the oxygen atmosphere was also proved to enhance charge transfer due to reduced trap states and increased electron mobility . Recently, Liu and coworkers demonstrated a efficiency of 21.52% in planar PSCs by adding ethylenediaminetetraacetic acid (EDTA) in the precursor to achieve improved electron mobility and an energy level of low‐temperature‐processed SnO 2 films .…”

Section: Introductionmentioning

confidence: 99%

Regulation of Interfacial Charge Transfer and Recombination for Efficient Planar Perovskite Solar Cells

et al. 2019

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Control of dynamics at the electron transport layer–perovskite interface, such as charge transfer and recombination, is essential in achieving high‐efficiency planar perovskite solar cells (PSCs). Herein, it was observed that the trade‐off between unfavorable electron transport of a thick SnO2 film and serious electron recombination at thin SnO2 film/perovskite interfaces is essential for the performance of SnO2‐based planar PSCs. The optimized efficiency of devices beyond 20% is obtained by using a two‐step deposition of SnO2. Moreover, trap‐assisted carrier recombination is significantly suppressed by using the diethylenetriaminepentaacetic acid passivator via the formation of coordination with undercoordinated Sn and Pb2+ ions. As a result, the champion device demonstrates a promising efficiency of 21.28% with negligible hysteresis and much improved environmental stability, i.e., retaining 98% of the initial efficiency under ambient atmosphere over 1000 h.

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Defect engineering of oxygen vacancies in SnOx electron transporting layer for perovskite solar cells

Cited by 24 publications

References 29 publications

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Ambient Fabrication of Organic–Inorganic Hybrid Perovskite Solar Cells

Regulation of Interfacial Charge Transfer and Recombination for Efficient Planar Perovskite Solar Cells

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Defect engineering of oxygen vacancies in SnOx electron transporting layer for perovskite solar cells

Cited by 24 publications

References 29 publications

Passivating Surface Defects of n‐SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Ambient Fabrication of Organic–Inorganic Hybrid Perovskite Solar Cells

Regulation of Interfacial Charge Transfer and Recombination for Efficient Planar Perovskite Solar Cells

Contact Info

Product

Resources

About

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells