Defect engineering of Czochralski single-crystal silicon

Sinno, Talid; Dornberger, E.; Ammon, Wilfried von; Brown, RA; Dupret, François

doi:10.1016/s0927-796x(00)00015-2

Cited by 133 publications

(84 citation statements)

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“…During cooling in the growth process and after various thermal treatments, the oxygen precipitates are formed due to decomposition of these solutions, and simultaneously dislocation loops are formed because of accompanying rise and decomposition of the supersaturated solid solution of interstitial silicon atoms [8,9]. Very often, the decomposition processes are not completed fully, and the metastable defect structure is "frozen" in the crystal, as it is observed in the case of the investigated Cz Si sample.…”

Section: Discussionmentioning

confidence: 81%

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Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Vladimirova¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double-crystal X-ray diffractometer. Based on the characterization results, which have been obtained by using the formulas of the dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types, the concentrations and average sizes of oxygen precipitates and dislocation loops after imposing the magnetic field and their dependences on time after its removing have been determined.

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Section: Discussionmentioning

confidence: 81%

“…This approach is used to lock dislocations in order to prevent their propagation under mechanical stresses arising in technological processes [7,8]. The importance of these investigations is raised in view of increasing diameters of silicon wafers used in microelectronics and development of defect engineering [9].…”

Section: Introductionmentioning

confidence: 99%

Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Vladimirova¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Important among them, primarily from the angle of defect engineering, is isovalent doping [81][82][83][84][85]. Carbon (C), germanium (Ge), tin (Sn) and lead (Pb) together with Si form group IV of the periodic system.…”

Section: Impact Of Isovalent Doping a Backgroundmentioning

confidence: 99%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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“…5 Given the importance of nucleation and growth of clusters in materials processing, there has been much effort aimed at the development of simulation tools for predicting the relationship between processing conditions and the resultant properties ͑i.e., cluster size distribution͒ of a material. 6 Most such tools require as input the thermodynamic properties of the various species in a system as a function of temperature, cluster size and composition.…”

Section: Introductionmentioning

confidence: 99%