2016
DOI: 10.1021/acs.nanolett.6b01171
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Defect Engineering in Plasmonic Metal Oxide Nanocrystals

Abstract: Defects may tend to make crystals interesting but they do not always improve 10 performance. In doped metal oxide nanocrystals with localized surface plasmon resonance 11 (LSPR), aliovalent dopants and oxygen vacancies act as centers for ionized impurity scattering 12 of electrons. Such electronic damping leads to lossy, broadband LSPR with low quality factors,

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Cited by 128 publications
(198 citation statements)
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“…This phenomenon has also been observed in some metal oxides such as WO x 8 and Ce:In 2 O 3 . 9 The optical characteristics of plasmonic nanoparticles are tunable based on the size and the shape of the nanoparticle. 10 The energy accumulated in these oscillating surface plasmons can be used in several ways to accelerate the rates of chemical reactions.…”
Section: Introductionmentioning
confidence: 99%
“…This phenomenon has also been observed in some metal oxides such as WO x 8 and Ce:In 2 O 3 . 9 The optical characteristics of plasmonic nanoparticles are tunable based on the size and the shape of the nanoparticle. 10 The energy accumulated in these oscillating surface plasmons can be used in several ways to accelerate the rates of chemical reactions.…”
Section: Introductionmentioning
confidence: 99%
“…Small variations are observed in the SPR peaks but it was hard to detect a regular increase or decrease concerning the nanocube sizes as reported in the literature. 51,52 In order to detect the photoluminescence (PL) features of the Pd decorated ZnO nanolayers, we measured the PL characteristics of all three Pd@ZnO@PAN-NFs and compare them with ZnO@PAN-NF, as shown in Fig. 7.…”
Section: Resultsmentioning
confidence: 99%
“…For the electron mobility calculations, the effective carrier mass for Sn:In2O3 and Sn,Zr:In2O3 NCs was approximated as 0.39me whereas that for Zr:In2O3 NCs was 0.22me as suggested by Xu et al 28 Even if the same effective carrier mass is assumed, the electron mobilities in Zr:In2O3 NCs would be equivalent if not greater to that of Ce-doped In2O3 NCs. 26 We attribute this extraordinary electronic quality of Zr:In2O3 NCs to the optimized position of the Zr defect level in the electronic band structure of In2O3 coupled with surface segregated Zr doping, which ensures that the electrostatic potentials experienced by the electrons do not change significantly through the lattice of In2O3. These effects combine to produce a rare combination of high LSPR Q-factor, high dopant activation, and low levels of electron scattering implying high electron mobilities, all in one material.…”
mentioning
confidence: 99%