Defect energy levels in electron-irradiated and deuterium-implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>silicon carbide

Aboelfotoh, M. O.; Doyle, J. P.

doi:10.1103/physrevb.59.10823

Cited by 76 publications

(77 citation statements)

References 32 publications

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“…Suggestions have ranged from the V C V Si divacancy [5], the negatively charged V C [6], the V Si complex [8], the V C C Si defect [9], or the N i -C i [10]. As discussed, the observed 0.3 MeV threshold for the E 1 =E 2 gives strong evidence that these defects originate from the displacement of the C atom in the SiC sublattice.…”

Section: P H Y S I C a L R E V I E W L E T T E R S Week Ending 26 Marmentioning

confidence: 99%

mentioning

confidence: 99%

“…Figure 1 shows typical DLTS spectra of the electron irradiated samples (dosage of 5 10 15 cm ÿ2 ) with E e 0:2 MeV to 1.7 MeV. It is seen that peaks at 120, 200, and 260 K (previously reported as ED1 [5], E 1 =E 2 [2 -9], and E i [4,6,9]) are clearly seen only for the samples irradiated with electrons having energies E e 0:3 MeV. No signal is found in the as-grown and the 0.2 MeV irradiated samples (with DLTS measurement detect limiting 10 12 cm ÿ3 ).…”

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confidence: 99%

“…The E 1 =E 2 doublet is not only the most dominant but also appears to be the most thermal stable in electron irradiated n-type 6H-SiC. The microstructure responsible for this level has been attributed to [6,9], and N i -C i complex [10].All previous deep level transient spectroscopy (DLTS) studies on electron irradiated 6H-SiC materials usually involved high energy electron irradiations (>MeV). Such investigations induce defect types originating from both C and Si atoms displacement and thus provide no basis for discriminating between primary vacancy defects originating on either sublattice.…”

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Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
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N-type 6H-SiC samples irradiated with electrons having energies of E e 0:2, 0:3, 0:5, and 1:7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e 0:3 MeV, deep levels ED1, E 1 =E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 =E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice. DOI: 10.1103/PhysRevLett.92.125504 PACS numbers: 61.72.Ji, 61.80.Fe, 81.05.Je Silicon carbide (SiC) is a promising wide band gap material for fabricating high-temperature, highpower, and high-frequency electronic devices [1]. Deep level defects induced by ion implantation or particle irradiation have been extensively studied because of their great influence on the materials' electrical and optical properties. A general classification for ion implanted or particle irradiated n-type 6H-SiC includes levels ED1 ( E C -0:27 eV), E i ( E C -0:51 eV), E 1 =E 2 ( E C -0:34=0:44 eV, with the name of Z 1 =Z 2 for 4H-SiC), and Z 1 =Z 2 ( E C -0:58=0:72 eV, with the name of E 1 =E 2 for 4H-SiC) [2 -9]. Information involving the microstructures of these deep levels is controversial and incomplete. The E 1 =E 2 doublet is not only the most dominant but also appears to be the most thermal stable in electron irradiated n-type 6H-SiC. The microstructure responsible for this level has been attributed to [6,9], and N i -C i complex [10].All previous deep level transient spectroscopy (DLTS) studies on electron irradiated 6H-SiC materials usually involved high energy electron irradiations (>MeV). Such investigations induce defect types originating from both C and Si atoms displacement and thus provide no basis for discriminating between primary vacancy defects originating on either sublattice. Since the C atom has a significantly smaller mass than that of Si atom (Si=C 2:33), the maximum energy transferred from the electron to the C atoms in the SiC lattice during elastic collision is larger than that of the Si atom. This implies the value of the minimum electron energy for creating the defect V C , originating from displacing a C atom, would be lower than that for creating the defect V Si . This idea has been nicely demonstrated recently by Rempel et al. [11]. Using both positron lifetime and coincident Doppler broadening techniques, it was shown that for low electron irradiation energy 0:5 MeV > E e > 0:3 MeV, only V C was generated, while at higher energy (E e > 0:5 MeV), V Si could also be detected [11]. The precise values of threshold electron irradiation energies for displacement of either the C or the Si atoms are difficult to estimate since they depend to some extent on the conduction type, the growth techniques, or the relative orientation of crystallographic planes of the sample to the incident electron direction and on sample temperature. Nevertheless, the approximate values given above can provide helpful...

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Section: P H Y S I C a L R E V I E W L E T T E R S Week Ending 26 Marmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
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“…But how much more complicated is the situation for a compound semiconductor like SiC? Experimental studies indicate that the annealing of vacancy-type defects created by irradiation on the carbon sublattice occurs at about 150 • C [2,3], while the vacancies on the silicon sublattice are becoming mobile at about 750 • C [2,3,4,5]. Since the formation energies of carbon and silicon vacancies are about 4 and 8 eV, according to recent calculations [6,7,8], respectively, for charge-neutral defects in stoichiometric material, it does not seem likely that these point defects are solely responsible for the self-diffusion.…”

Section: Introductionmentioning

confidence: 99%

Self-interstitials in 3C-SiC

Lento

Torpo

Staab

et al. 2004

J. Phys.: Condens. Matter

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Abstract. We report results from density-functional plane-wave pseudopotential calculations for carbon and silicon self-interstitials in cubic silicon carbide (3C-SiC). Several initial ionic configurations are used in the search for the global totalenergy minimum including tetragonal, split [100] and split [110] geometries. Neutral carbon interstitials are found to have several nearly degenerate total-energy minima configurations in split-interstitial geometries, with formation energies rangingbesides higher metastable ones -from 6.3 to 6.7 eV in stoichiometric SiC. In contrast, the neutral silicon interstitials have a clear single minimum total-energy configuration at the tetrahedral configuration with carbon nearest neighbours, exhibiting a formation energy of 6.0 eV. The split interstitial in the [110] direction at silicon site and the tetrahedral configuration with silicon nearest neighbours are metastable and have significantly higher formation energies. The present calculations indicate that the carbon interstitial introduces deep levels in the band gap while the silicon interstitial at the tetrahedral site behaves like a shallow donor.

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Lifetime‐Killing Defects in 4H‐SiC Epilayers and Lifetime Control by Low‐Energy Electron Irradiation

Kimoto¹,

Danno²,

Suda³

2009

Silicon Carbide

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Defect energy levels in electron-irradiated and deuterium-implanted6Hsilicon carbide

Cited by 76 publications

References 32 publications

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
View full text Add to dashboard Cite

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
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Self-interstitials in 3C-SiC

Lifetime‐Killing Defects in 4H‐SiC Epilayers and Lifetime Control by Low‐Energy Electron Irradiation

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Defect energy levels in electron-irradiated and deuterium-implanted6Hsilicon carbide

Cited by 76 publications

References 32 publications

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2Chen1, Yang2, Gong3 et al. 2004Phys. Rev. Lett.231180View full textAdd to dashboardCite

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2Chen1, Yang2, Gong3 et al. 2004Phys. Rev. Lett.231180View full textAdd to dashboardCite

Self-interstitials in 3C-SiC

Lifetime‐Killing Defects in 4H‐SiC Epilayers and Lifetime Control by Low‐Energy Electron Irradiation

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Product

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Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
View full text Add to dashboard Cite

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
View full text Add to dashboard Cite