Defect distribution in crystalline silicon irradiated with high-energy electrons

Abstract

The depth distribution of the radiation dcfects in n‐type silicon are approximately determined from the measured values of the resistivity versus depth curve by using the production rates of each defect obtained in a previous paper for 2, 3.9, 4.5, 7, and 9 MeV electrons. The observed elec‐tron ranges are in good agreement with the theoretical values of Berger and Seltzer. The defect distribution can be qualitatively interprctcd by tsking into account the energy spectra of electrons at various depths and the production rate of defects. The total nnmbers of vacancy‐related defects Nt produced by electron irradiation at depths from zero to the maximum one at which the resistiv‐ity changes arc estimated. The energy dependence of Nt are fairly well explained by applying Cahn's theory.

X-Ray Interferometric Investigations of Radiation Induced Imperfections of Silicon Crystals

“…An electrical method is known for the study of the density of radiation defects in crystals, and with its help the distribution of radiation defects in depth formed in n-type silicon at irradiation with beams of 2 to 9 MeV electrons was approximately determined by measurements of the resistance distribution [2].…”