Defect Distribution and MIGS at Metal/Ge Interfaces; First-Principles Study

Abstract

Distributions of point defects like vacancy are studied around metal/Ge interfaces by the first-principles calculation. It is shown that the defect density remarkably increases at the interface, while the Schottky barrier shows the Fermi-level pinning not depending on the kind of defects. We show that these features reflect the hybridization of defect electronic states with the metal induced gap states (MIGS).