Nuclear Instruments and Methods in Physics Research Section B:
1996
DOI: 10.1016/0168-583x(95)01330-x
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Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions

H. Krause
1
,
R. Flagmeyer
2
,
J. Vogt
3
et al.
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Cited by 3 publications
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