Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

Abstract

The performance of semiconductor devices on silicon can be severely degraded by the presence of dislocations incurred during heteroepitaxial growth. Here, the physics of the defect mechanisms, characterization of epitaxial structures and device properties of waveguide photodetectors (PDs) epitaxially grown on (001) Si is presented. A special GaAs-on-Vgrooved-Si template was prepared by combining the aspect ratio trapping effects, superlattice cyclic, and strain-balancing layer stacks. A high quality of buffer structure was characterized by atomic force microscopy (AFM) and electron channeling contrast imaging (ECCI) results. An ultra-low dark current density of 3.5×10-7 A/cm 2 at 300 K was measured under-1 V. That is 40 times smaller than the best reported value of epitaxially grown InAs/GaAs quantum dot photodetector structure on GaP/Si substrate. Low frequency noise spectroscopy was used to characterize the generation and recombination related deep levels. A trap with an activation energy of 0.4 eV was identified, which is near the middle bandgap. With low frequency noise spectroscopy along with the current-voltage and capacitance-voltage characterizations, the recombination lifetime of 27 μs and trap density of 5.4×10 12 cm-3 were estimated.

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

“…2. The nonradiative recombination centers are modelled as laser sections z with fast carrier loss rate dis -1 , representing carrier capture into mid-bandgap defect states 10 . We set dis to infinity in dislocation-free regions, while choosing a dislocation capture time dis = 10 ps at z = 500 nm under the assumption of a carrier capture process of the order of a few picoseconds similar to the one into QD states.…”

“…Yet despite considerable advances in the optimization of defect filter and buffer layers, none of the groups growing high-performance 1.3 m QD lasers on silicon have succeeded in demonstrating a silicon-based QW laser 8,9 . While few experimental studies exploring the nature of defects in InAs QD lasers on silicon have started to become available 10,11 , there is still a lack of theoretical work investigating the performance discrepancies between QD and QW lasers on silicon and how these lasers can be modelled appropriately. Here, we present an approach to simulating such devices using a rate equation travelling-wave model with high spatial resolution enabling the inclusion of individual dislocations.…”

Modelling Electron Channeling Contrast Intensity of Stacking Fault and Twin Boundary Using Crystal Thickness Effect

“…For instance, dislocation interactions with grains boundaries and/or their nucleation under stress is one of the keys of the mechanical behavior of metals. Besides, having strong interactions with impurities in semiconductors, dislocations act as non-radiative recombination centers [ 1 , 2 ]. Moreover, planar defects such as native twins and/or deformation twinning have to be considered to enlighten the mechanisms of metals plastic deformation; strain accommodation [ 3 , 4 ].…”

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

“…QDs leads to ultra-low dark current density of 3.5 ×10 -7 A/cm 2 in QD PDs directly grown on (001) Si, together with a decent responsivity around 0.2 A/W in the O-band 6 .…”