Defect characterization and gettering effect in excimer laser gettering

Abstract

The mechanism and effect of a new extrinsic gettering method utilizing excimer laser irradiation called excimer laser gettering (ELG) was examined by transmission electron microscopy (TEM) observation and measurements of the electric properties of metal‐oxide‐semiconductor (MOS) capacitors. By means of TEM, stacking fault tetrahedra and V‐shaped dislocations were found in the irradiated regions of Si wafers and these defects were proved to be thermally stable. Dielectric breakdown failure of SiO2 films and generation lifetime of minority carriers were improved remarkably by ELG. It was confirmed that the gettering effect of ELG has higher temperature persistence than sandblasting methods used heretofore.