Defect and Impurity-Complex Depassivation During Electron-Beam Irradiation of GaAs

Fleetwood, D.M.; O’Hara, Andrew; Mayer, Theresa S.; Melloch, M. R.; Pantelides, Sokrates T.

doi:10.1109/tns.2021.3067769

Cited by 2 publications

(4 citation statements)

References 80 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Oxygen is a common impurity in GaAs grown through a variety of methods, [51][52][53][54][55][56] including molecular beam epitaxy (MBE) and metal-organic chemical-vapor-deposition (MOCVD). Recently, the O As defect was proposed 29 as a possible contaminant-related defect in GaAs based on reanalysis of thermal generation rate studies on p-i-n-i-p GaAs structures grown by molecular beam epitaxy. 57,58 In Ref.…”

Section: Discussionmentioning

confidence: 99%

“…The relevant density-functional-theory calculations utilize the same base parameters as in Ref. 29. For AlGaAs, a quarter of the Ga atoms were substituted with Al in a checkboard pattern at a lattice constant of 5.65 Å.…”

Section: Discussionmentioning

confidence: 99%

“…A strongly nonuniform defect-energy dependence is observed, consistent with studies of the low-frequency noise of GaN/AlGaN HEMTs. 12,16,26,29 In practice, these effective energies include transitions between a trap and the proximal energy band, or the energy required to reconfigure a defect between charge states on opposite sides of the Fermi energy. 16,[29][30][31][32] The most prominent peak in Fig.…”

Section: B Low-frequency Noise Measurementsmentioning

confidence: 99%

“…12,16,26,29 In practice, these effective energies include transitions between a trap and the proximal energy band, or the energy required to reconfigure a defect between charge states on opposite sides of the Fermi energy. 16,[29][30][31][32] The most prominent peak in Fig. 9 is located at ∼290 K with E o ≈ E act ≈ 0.51 eV.…”

Section: B Low-frequency Noise Measurementsmentioning

confidence: 99%

See 3 more Smart Citations

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.

show abstract