Deep silicon cell fabrication for chip-scale atomic sensors

Abstract

Using a simple and cost-effective water-jet process, we have overcome silicon etch depth limitations to realize a 6 mm deep atomic vapor cell. We have successfully used this approach to demonstrate a two-chamber geometry by including a 25 mm meandering channel between the alkali pill chamber and main interrogation chamber. Additionally, we have recently used this approach in the fabrication of deep cut silicon cells for cold atom systems. The results will be highlighted, as well as providing an overview of our advancements on mass producible components for cold-atom systems and the amalgamation of this technology towards a fully integrated system.