Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

Jensen, Søren Højgaard; Yalçınkaya, Arda Deniz; Jacobsen, Søren; Rasmussen, T.; Rasmussen, Frank Engel; Hansen, Ole

doi:10.1088/0031-8949/2004/t114/047

Cited by 5 publications

(5 citation statements)

References 10 publications

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“…Progress towards higher aspect ratios through techniques like DRIE or UV-photolithography is on going. [19][20][21] Developing the correct combination of materials, etchants and etch stops must be considered for new configurations and are especially important when introducing unconventional complementary metal oxide semiconductor (CMOS) materials. Regardless of these drawbacks, Si-based fabrication methods represent the most complete and well-understood toolset for MEMS development.…”

Section: Si-based Devicesmentioning

confidence: 99%

Emerging materials for microelectromechanical systems at elevated temperatures

2014

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Extension of microelectromechanical systems (MEMS) into more extreme operating conditions will require a wider range of material properties than are currently available in conventional systems. Successful integration of new materials is dependent on concurrent development of compatible fabrication routes and scale appropriate evaluation techniques. This review focuses on emerging material classes that have potential to replace silicon-based MEMS in elevated temperature applications. Basic silicon mechanical properties and micromachining methods are reviewed to provide context for developing material systems such as silicon carbide, silicon carbonitrides, and several nickel-based alloys. Potential improvements in strength, thermal stability, and reliability are juxtaposed with fabrication, reproducibility, and economic feasibility issues that must also be addressed.

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Section: Si-based Devicesmentioning

confidence: 99%

Emerging materials for microelectromechanical systems at elevated temperatures

2014

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“…A CF 4 -based etch recipe yielded very high SiN/Al 2 O 3 etch selectivity (60:1). 300 μm deep, high-aspect-ratio (10:1) Si trenches were next formed on the wafer back side using the Bosch process (deep reactive ion etching tool), with very-high etch selectivity to Al 2 O 3 (Si/Al 2 O 3 of 3000:1),[17,18] as shown in Figure 2a. Even with significant overetching, a reduction in Al 2 O 3 thickness of less than 10 nm was observed, resulting in thinned membranes with a final thickness of 60 nm.…”

mentioning

confidence: 99%

Highly Sensitive, Mechanically Stable Nanopore Sensors for DNA Analysis

et al. 2009

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“…Thin-film technologies that enable conformal coatings on these features have been applied to a variety of electronic devices, including microelectromechanical systems (MEMS), [5][6][7] dynamic random access memory (DRAM), [8][9][10] and through silicon via (TSV), 11,12 to exploit the large surface area and to functionalize the devices. Chemical vapor deposition (CVD), which is a technology having good step coverage, cannot meet these demands.…”

mentioning

confidence: 99%

“…Microfabrication technologies, such as deep reactive ion etching (DRIE), [1][2][3][4] have enabled the fabrication of three-dimensional (3D) complex structures with extremely high aspect ratios (HAR), above 50 for instance, on the surface of silicon wafers. Thin-film technologies that enable conformal coatings on these features have been applied to a variety of electronic devices, including microelectromechanical systems (MEMS), [5][6][7] dynamic random access memory (DRAM), [8][9][10] and through silicon via (TSV), 11,12 to exploit the large surface area and to functionalize the devices. Chemical vapor deposition (CVD), which is a technology having good step coverage, cannot meet these demands.…”

mentioning

confidence: 99%

One-Step Fabrication of Copper Thin Films on Insulators Using Supercritical Fluid Deposition

Uejima

Momose

Sugiyama

et al. 2013

J. Electrochem. Soc.

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A one-step fabrication method for direct supercritical fluid deposition (SCFD) of Cu on insulators was developed. This overcomes the limitation of conventional SCFD, which cannot directly deposit Cu on insulators. In our one-step method, a relatively small amount of an Mn precursor was mixed with a Cu precursor to deposit a CuMn x O y composite layer on an insulative underlayer. This underlayer then acted as a buffer layer, allowing subsequent Cu deposition. This method successfully achieved Cu deposition on insulators, including SiO 2 , boron phosphorus silicon glass (BPSG), and Parylene. The superior conformal deposition ability of conventional SCFD was also demonstrated using our one-step method, where Cu was deposited uniformly on an overhung test structure. Detailed analysis revealed that our one-step method was initiated by deposition of MnO x , which could include Cu, resulting in CuMn x O y film formation, followed by Cu deposition. The amount of the MnO x deposited during Cu deposition was negligible due to the much lower growth rate of MnO x compared with Cu. This process is useful for the fabrication of electronic devices having complex features and comprising various materials. . This paper is part of the JES Focus Issue on Electrochemical Processing for Interconnects.Microfabrication technologies, such as deep reactive ion etching (DRIE), 1-4 have enabled the fabrication of three-dimensional (3D) complex structures with extremely high aspect ratios (HAR), above 50 for instance, on the surface of silicon wafers. Thin-film technologies that enable conformal coatings on these features have been applied to a variety of electronic devices, including microelectromechanical systems (MEMS), 5-7 dynamic random access memory (DRAM), 8-10 and through silicon via (TSV), 11,12 to exploit the large surface area and to functionalize the devices. Chemical vapor deposition (CVD), which is a technology having good step coverage, cannot meet these demands. Electroless deposition (ELD) is another candidate, which conventionally requires catalytic underlayer, and recently becomes possible on the insulating underlayers using Au nanoparticle catalyst. 13-15 ELD is a wet process, and thus advantageous in simplicity of equipment, while supercritical fluid deposition (SCFD), which is a focus of this paper, requires incidental facilities including a high pressure pump and a pressure control system to realize deposition under high pressure environment. Nevertheless, SCFD seems to have more possibility to achieve conformal deposition on extremely high-aspect-ratio features. Because step coverage is determined by the balance between the transportation of the precursor by diffusion within the trenches and consumption of the precursor on the side walls by deposition reactions, higher diffusivity in SCFD (10 −7 -10 −8 m 2 /s) compared with that in liquid solution of ELD (10 −10 m 2 /s) leads to higher step coverage.SCFD is a novel approach that achieves conformal deposition onto HAR features. This method uses the oxidation/reduction...

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Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

Cited by 5 publications

References 10 publications

Emerging materials for microelectromechanical systems at elevated temperatures

Emerging materials for microelectromechanical systems at elevated temperatures

Highly Sensitive, Mechanically Stable Nanopore Sensors for DNA Analysis

One-Step Fabrication of Copper Thin Films on Insulators Using Supercritical Fluid Deposition

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