Deep levels in ZnSe epitaxial layers examined by piezoelectric photoacoustic spectroscopy

Yoshino, Kenji; Nakagawa, Yasuhiro; Fukuyama, Atsuhiko; Maeda, Kouji; Yoneta, Minoru; Saitô, Hiroshi; Ohishi, Masakazu; Ikari, Tetsuo

doi:10.1016/s0022-0248(98)80241-8

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…The activation energies of C, B, E and A are estimated to be (55 AE 5), (620 AE 30), (870 AE 30), (1200 AE 10) meV, respectively. The values of peaks A, B and C almost correspond to those obtained by PPA spectra in a previous paper [6]. However, in this study, the new peak E appears in the n-type sample, and this may be due to differences of crystal growth conditions such as a substrate temperature or VI/II ratio.…”

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confidence: 87%

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Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

Yoshino

Nakagawa

Fukuyama

et al. 1998

phys. stat. sol. (b)

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The piezoelectric photoacoustic (PPA) spectra were successfully observed between liquid nitrogen and room temperatures for undoped (n-type) and N-doped (p-type) ZnSe epitaxial layers on a GaAs substrate grown by molecular beam epitaxy (MBE). Four different nonradiative recombination centers due to lattice defects are obtained in the nondoped and the N-doped sample. In the N-doped ZnSe, the lattice defects with an activation energy of (180 AE 5 meV are considered to be N Se ±Zn±N Se complex acceptors. Three other peaks of nonradiative centers are due to intrinsic defects in the N-doped sample, since they are also obtained in nondoped samples. We have obtained nonradiative recombination centers in N-doped p-type ZnSe thin films grown by MBE for the first time.

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confidence: 87%

“…In a previous paper [6], the PPA measurements of high-quality undoped (n À -type; high resistivity) ZnSe thin films grown by molecular beam epitaxy (MBE) are carried out at liquid nitrogen and room temperatures. Three types of the intrinsic defects for nonradiative recombination processes in the undoped ZnSe epitaxial layers were obtained for the first time.…”

mentioning

confidence: 99%

Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

Yoshino

Nakagawa

Fukuyama

et al. 1998

phys. stat. sol. (b)

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“…The activation energy of the intrinsic defect is estimated to be about 1.21 eV. This value is also obtained in the nondoped ZnSe epitaxial layers at a VI/II ratio of 12 [5]. No other peak is observed in the nondoped sample (VI/II 6).…”

supporting

confidence: 65%

Nonradiative Carrier Recombination Centers of Cl-Doped ZnSe Epitaxial Layers

Yoshino

Mikami

Yoneta

et al. 2000

phys. stat. sol. (a)

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Zinc selenide (ZnSe) energy and capture cross section of traps possibly due to acceptors and donors

Landolt-Börnstein - Group III Condensed Matter

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Deep levels in ZnSe epitaxial layers examined by piezoelectric photoacoustic spectroscopy

Cited by 6 publications

References 12 publications

Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

Nonradiative Carrier Recombination Centers of Cl-Doped ZnSe Epitaxial Layers

Zinc selenide (ZnSe) energy and capture cross section of traps possibly due to acceptors and donors

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