Deep level transient spectroscopy and photoluminescence studies of hole and electron traps in ZnSnP₂ bulk crystals

Abstract

ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by first-principle study.