Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Ḿonemar, B.; Janzén, Erik; Hemmingsson, Carl

doi:10.1103/physrevb.94.045206

Cited by 14 publications

(9 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, DFT studies have shown that typically, Mg-related defects, such as Mg i , Mg Ga V N , Mg Ga H, and Mg Ga V N H, are either close to the valence band, rather than to the conduction band, or do not yield any level in the bandgap. 1,31 Indeed, Duc et al 32 have found an acceptor trap in Mg-doped MOCVD-grown GaN at E V þ 0.57-0.60 eV and assigned it to a Mg-related defect. In addition, Albrecht et al 33 have not found any Mg-related defect in n-type GaN grown on sapphire implanted with the 28 Mg radio-active isotope and annealed at 1000 C, by radiotracer DLTS.…”

Section: -2mentioning

confidence: 99%

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Alfieri

Sundaramoorthy

Micheletto

2018

Journal of Applied Physics

View full text Add to dashboard Cite

Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 C. The nature of the detected defects is then discussed in the light of the results found in the literature.

show abstract

Section: -2mentioning

confidence: 99%

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Alfieri

Sundaramoorthy

Micheletto

2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…As it was shown that H1 concentration decreases with the carbon content of the epilayers, its nature has been associated with the carbon substitutional (

{normalC}_{normalN}

) and its concentration was accurately estimated by Kanagae et al Besides H1, another trap labeled H3 was also found at

E_{normalV} + 0.25 eV

, but no hypothesis on the nature of this trap has been put forward. Coming to the case of particle‐irradiated GaN, if we exclude one study on electron‐irradiated GaN or on proton‐irradiated GaN, nothing is known on the presence of minority carrier traps in implanted material.…”

Section: Introductionmentioning

confidence: 99%

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Alfieri

Sundaramoorthy

2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

Ion implantation is a key step for device processing. This is required for anode/cathode or junction termination extension formation, which relies on the use of multiple‐energy implantation profiles (box profile). However, electrically active defects are known to arise after implantation, especially in the implant‐tail region. Although there are studies on majority carrier traps in implanted GaN, not much is known on minority carrier traps. For this reason, the electrical characterization of minority carrier levels is conducted in ion‐implanted n‐type GaN. Three electrically active levels are found in the 0.18–1.2 eV energy range, above the valence band edge, and their nature is discussed in the light of theoretical studies found in the literature.

show abstract

“…The minority carrier traps could be investigated using optical deep level transient spectroscopy (ODLTS) [19,20] or minority carrier transient spectroscopy (MCTS) [21,22] to boost the minority carrier concentration. Polyakov et al identified hole traps with activation energies of 0.7 and 0.9 eV in n-GaN SBDs grown on sapphire substrates using ODLTS [23,24] .…”

Section: Introductionmentioning

confidence: 99%

“…Polyakov et al identified hole traps with activation energies of 0.7 and 0.9 eV in n-GaN SBDs grown on sapphire substrates using ODLTS [23,24] . Amor et al also revealed a hole trap characterized by activation energy of 0.76 eV utilizing DLTS, but only capture crosssection and emission time were extracted [20] . There are still some issues that need to be addressed to thoroughly understand the minority carrier trap properties in GaN materials.…”

Section: Introductionmentioning

confidence: 99%

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Sui,

Chen,

et al. 2024

J. Semicond.

View full text Add to dashboard Cite

Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

show abstract

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

Cited by 14 publications

References 47 publications

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Contact Info

Product

Resources

About