Abstract:Results of the electrical study of the damage caused by Ar-ion beam etching in MBE grown Al x Ga 1-x As : Si laser diode material are reported. This study has involved measurements of capacitance as a function of voltage and temperature as well as deep level transient spectroscopy measurements on Schottky-barriers diodes. The Schottky contacts were fabricated conventionally by depositing Au in a vacuum onto the etched AlGaAs surface. For a reference the Schottky diodes of the best quality were produced in-situ… Show more
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