Deep Learning-Based ASM-HEMT I-V Parameter Extraction

Chavez, Fredo; Davis, Devin T.; Miller, Norman N.; Khandelwal, Sourabh

doi:10.1109/led.2022.3197800

Cited by 11 publications

(3 citation statements)

References 20 publications

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“…This type of nonlinear modeling could enable circuit designers to instantly prescribe the harmonic impedances for specific amplifier classes without the need for tedious harmonic active load pull [21]. Statistical nonlinear modeling [22] and deep learningbased nonlinear modeling [23] of GaN HEMTs are other active research topics that have the goals of analyzing process variations and enabling fast and accurate extraction of GaN HEMTs, respectively. Finally, a recent thrust has been devoted to temperature-dependent nonlinear modeling of GaN HEMTs using the ASM-HEMT [24].…”

Section: Asm-hemt Compact Modelingmentioning

confidence: 99%

Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Miller,

Grupen,

Gibiino

et al. 2024

IEEE Microwave

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Section: Asm-hemt Compact Modelingmentioning

confidence: 99%

Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Miller,

Grupen,

Gibiino

et al. 2024

IEEE Microwave

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“…To address these challenges, researchers have delved into various optimization-based techniques for parameter extraction, including the application of genetic algorithms (GA) [1][2][3] and the implementation of deep learning methodologies (DL) [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning

Park,

Kim,

Lee

et al. 2024

IEEE Access

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Accurate current-voltage (I-V) modeling based on the Berkeley short-channel insulated-gate field-effect transistor model (BSIM) is pivotal for integrated circuit simulation. However, the current BSIM model does not support a buried-channel-array transistor (BCAT), which is the structure of the state-of-theart commercial dynamic random access memory (DRAM) cell transistor. In this work, we propose an intelligent I-V modeling technique that combines genetic algorithm (GA) and deep learning (DL). This hybrid technique facilitates both optimization of BSIM parameter and accurate I-V modeling, even for devices not originally supported by BSIM. Additionally, we extended application of the DL to model one of the principal degradation mechanisms of transistor, the hot-carrier degradation (HCD). The successful modeling results of I-V characteristic and device degradation demonstrated that devices not supported by BSIM can be accurately modeled for integrated circuit simulations.

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“…The ASM-HEMT is one such physics-based model which has shown promise in the literature [27]- [33]. This model has been employed for numerous applications including several recent works on statistical nonlinear modeling [34] and deep learning-based nonlinear modeling [35]. The temperature dependence of GaN HEMTs has also been modeled with the ASM-HEMT.…”

Section: Introductionmentioning

confidence: 99%

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

Miller,

Brown,

Elliott

et al. 2023

IEEE J. Electron Devices Soc.

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This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Several results are reported which validate the model including DC-IV, pulsed-IV, scatteringparameter, and load-pull measurements. The model is then used to extrapolate the performance of the GaN HEMT to twice the operating temperature at which the model was validated. This work could be useful for understanding and modeling GaN HEMTs in high-temperature environment applications.

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Deep Learning-Based ASM-HEMT I-V Parameter Extraction

Cited by 11 publications

References 20 publications

Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

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