Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
Yuanquan Huang,
Hongye Yuan,
Bowen Nie
et al.
Abstract:The nitridation process can significantly improve the quality of the interfacial layer and suppress the unrecoverable electron trapping of the interfacial states during cycling, which is the main cause of endurance enhancement. In this work, through in-depth analysis of defect behavior during memory window (MW) degradation in ferroelectric field effect transistors (FeFETs), it is found that the degradation of FeFET devices with SiON interfacial layer starts within the HZO layer, while the degradation process o… Show more
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