Deep electron traps and origin of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type conductivity in the earth-abundant solar-cell material Cu<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>ZnSnS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>

Han, Dong; Sun, Yiyang; Bang, Junhyeok; Zhang, Y. Y.; Sun, Hong‐Bo; Li, Xianbin; Zhang, S. B.

doi:10.1103/physrevb.87.155206

Cited by 114 publications

(25 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in several works [11][12][13][14], the deviations from stoichiometry in these materials influence critically their optical and electrical properties which ultimately define efficiencies. In the particular case of CZTS, it has been shown that the efficiency is improved for Cu-poor and Zn-rich thin films, i.e., films with a [Cu]/([Zn] + [Sn]) < 1 and [Zn]/[Sn] > 1 [15][16][17][18][19]. A similar trend was observed in Cu-poor CIGS [20][21][22][23].…”

Section: Introductionmentioning

confidence: 67%

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Teixeira

Sousa

et al. 2014

Phys. Rev. B

View full text Add to dashboard Cite

The theoretical models of radiative recombinations in both CuIn 1−x Ga x Se 2 chalcopyrite and Cu 2 ZnSnS 4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu 2 ZnSnS 4 -based solar cells in which the absorber layer was grown through sulphurization of multiperiod structures of precursor layers. For both samples the luminescence is dominated by an asymmetric band with peak energy at ∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of ∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed.

show abstract

Section: Introductionmentioning

confidence: 67%

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Teixeira

Sousa

et al. 2014

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Experimentally determined thermal activation energies are quite low 30-60 meV [3,4,5] compared to theoretical first principles calculations. These calculations [26,27], however, do not completely agree on the nature of the dominant defects and the level positions they introduce in the CZTS band gap. There seems to be a consensus that Cu Zn antisites (E a ≈ 120 meV [26], 220 meV [27]) and copper vacancies (V Cu , E a ≈ 20 meV [26], 70 meV [27]) are the dominant acceptor type defects, and that Zn Cu antisites (E a ≈ 150 meV [26], 70 meV [27]) and Cu interstitials (Cu i , E a ≈ 150 meV [26], 50 meV [27]) form rather shallow donors.…”

Section: Discussionmentioning

confidence: 84%

Photoluminescence investigation of Cu 2 ZnSnS 4 thin film solar cells

et al. 2015

View full text Add to dashboard Cite

Cu 2 ZnSnS 4 (CZTS) is a promising absorber for thin film solar cells which is non-toxic and consists of only abundant elements. In order to achieve higher solar cell efficiencies for this material, a better understanding about its defect structure is necessary. In this paper photoluminescence (PL) from sputtered CZTS thin film solar cells which differ in buffer layer thickness was studied. In the PL spectra three broad peaks could be distinguished between 0.9 and 1.3 eV. The PL measurements as a function of temperature and excitation power density revealed the presence of potential fluctuations. The separations between the band edge of the photoluminescence excitation signal and the PL emission peaks are large, which indicates that PL involves trapping of carriers by deep -level defects.

show abstract

“…The Cu 2 ZnSnS 4 (CZTS) quaternary compound is widely discussed over the last few years as an active layer in thin films photovoltaic devices1234567891011. Although the electronic properties of the CZTS-heterojunction solar cells have been studied extensively the knowledge of the CZTS basic properties is still limited.…”

mentioning

confidence: 99%

“…Although the electronic properties of the CZTS-heterojunction solar cells have been studied extensively the knowledge of the CZTS basic properties is still limited. Particularly, the crystal structure412, intrinsic optoelectronic5689131415 and electrical properties9101617 are not well understood. The development of photovoltaic technologies based on this semiconductor strongly requires for the availability of experimental techniques suitable for the analysis of the crystalline quality of the CZTS absorbers.…”

mentioning

confidence: 99%

Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals

Guc

Levcenko

Bodnar

et al. 2016

Sci Rep

View full text Add to dashboard Cite

A non-destructive Raman spectroscopy has been widely used as a complimentary method to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of the Raman active fundamental modes in this material is far from complete. Focusing on polarized Raman spectroscopy provides important information about the relationship between Raman modes and CZTS crystal structure. In this framework the zone–center optical phonons of CZTS, which is most usually examined in active layers of the CZTS based solar cells, are studied by polarized resonant and non-resonant Raman spectroscopy in the range from 60 to 500 cm−1 on an oriented single crystal. The phonon mode symmetry of 20 modes from the 27 possible vibrational modes of the kesterite structure is experimentally determined. From in-plane angular dependences of the phonon modes intensities Raman tensor elements are also derived. Whereas a strong intensity enhancement of the polar E and B symmetry modes is induced under resonance conditions, no mode intensity dependence on the incident and scattered light polarization configurations was found in these conditions. Finally, Lyddane-Sachs-Teller relations are applied to estimate the ratios of the static to high-frequency optic dielectric constants parallel and perpendicular to c-optical axis.

show abstract

Deep electron traps and origin ofp-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4

Cited by 114 publications

References 34 publications

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Photoluminescence investigation of Cu 2 ZnSnS 4 thin film solar cells

Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals

Contact Info

Product

Resources

About