Deep electrochemical trench etching with organic hydrofluoric electrolytes

Christophersen, M.; Merz, P.; Quenzer, J.; Carstensen, Jürgen; Föll, H.

doi:10.1016/s0924-4247(00)00514-8

Cited by 21 publications

(10 citation statements)

References 26 publications

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“…Therefore, the other macropores stop to grow. A similar phenomenon was observed by Christophersen et al in P-type silicon etched in an organic electrolyte [20]. An increase of the current density up to 7 mA/cm 2 leads to the formation of deeper (about 120 Am from the surface) and wider (maximum diameter of 21 Am) trenches, as it can be seen in Fig.…”

Section: Masked Layerssupporting

confidence: 84%

Fabrication of deep single trenches from N-type macroporous silicon

et al. 2005

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Section: Masked Layerssupporting

confidence: 84%

Fabrication of deep single trenches from N-type macroporous silicon

et al. 2005

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“…A key advantage is, that these type of structures can be random structured and processed within low cost standard equipment and facilities. In p-type Si substrates similar results have been obtained and trenches up to a depth of 300µm have been fabricated [52]. PSi, especially in an oxidized state, shows a significant reduced thermal conductivity [53].…”

Section: Porous Silicon For Micromachiningsupporting

confidence: 70%

MEMS applications of porous silicon

Benecke

Splinter

2001

SPIE Proceedings

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Porous silicon fabricated by partial electrochemical dissolution of bulk silicon, shows outstanding material properties. The nanostructure of the remaining Si-skeleton is used for specific optical devices, such as emitters and filters. The high internal surface of the material opens new opportunities for different types of microsensors and -actuators and microsystem concepts. The porous layers can be used as sacrificial layers due to the high reactivity of the material which leads to a new class of micromachined MEMS devices. A brief overview on the historic evolution of the material is given. The base technologies for the fabrication of porous silicon layers are described. An overview on specific applications is given to demonstrate the potential of the material and the technology behind.

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“…12,13,33,34,56,371,407,442,443 (ii) PSi can have a surface transition layer. It was found that the pores at the surface usually have smaller diameter than those in the bulk of PSi (Figure 76h).…”

Section: Influence Of Anodization Parameters On Microstructure Of Psimentioning

confidence: 99%