Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Kevin J.

doi:10.1109/led.2021.3077081

Cited by 13 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Meanwhile, the device under test (DUT) exhibits a high forward conduction current over 20 A at V GS = 5 V (figure 1(e)) [23]. At the same time, by sweeping the drain bias from the positive to negative, the desired reverse current capability in the 3rd-quadrant conduction is also revealed [24], where the reverse turn-on voltage (V RT ) of the device is determined by the V TH and V GS in a relationship of V TH -V GS [9], as illustrated in figure 1(e). Based on such correlation and considering that negatively-biased gate bias is normally adopted to turn off the high-speed GaN HEMTs to alleviate the cross-talk effects [25], a resultantly typical V RT of the device is evaluated to be 4.65 V at a V GS of −3 V, which is higher than that of Si metal oxide semiconductor field effect transistor (MOSFET) with a body-diode voltage drop of <1 V [26].…”

Section: Device Structure and Static Characteristicsmentioning

confidence: 95%

“…3rd-quadrant * Authors to whom any correspondence should be addressed. operation) of power switches is necessary to provide a freewheeling path [6,7], so that the load current can flow from the source to the drain for energy transfer [8,9]. However, for GaN HEMTs without built-in body diode, the turningon voltage of its reverse conduction is usually higher than the intrinsic voltage drops of Si body diodes [10,11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Third quadrant overvoltage ruggedness of p-gate GaN HEMTs

Yuan¹,

Zhou²,

Jin³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Overvoltage ruggedness is an essential reliability requirement for non-avalanche AlGaN/GaN power devices against inductive transient spikes in the OFF-state breakdown events. In this work, we first report the 3rd-quadrant (i.e. source-to-drain reverse operation) overvoltage ruggedness of the p-gate GaN high-electron-mobility transistors (HEMTs) by performing static current-voltage (I-V) sweeps and dynamic unclamped-inductive-switching experiments. Both experimental results reveal an inferior breakdown performance of the device under 3rd-quadrant blocking conditions, including a low static voltage of 98 V and a dynamic breakdown voltage (BV) of 155 V. In particular, this transient voltage is evidently degraded from 155 V to 114 V (i.e. a 26% reduction) by increasing the load current, which is significantly different from the stable BV (1.4 kV) achieved in the 1st-quadrant dynamic breakdown. Such unusual degradation behavior can be explained by the trapping-related carrier transport mechanism, which is supported by temperature-dependent breakdown characteristics. Further numerical simulations, de-capsulation failure analyses and repeated UIS experiments are carried out to study the failure mechanism and gain insight into the overvoltage capability of the device. These results suggest that the rational design of the p-gate GaN HEMTs with the desired 3rd-quadrant overvoltage ruggedness requires careful consideration, especially in reverse conduction events

show abstract

Section: Device Structure and Static Characteristicsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Third quadrant overvoltage ruggedness of p-gate GaN HEMTs

Yuan¹,

Zhou²,

Jin³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…SiC MOSFET is replacing Si IGBT, for its their great conduction resistance, switching speed, and wide operating temperature range [2]. GaN MOSFET also has high potential in Power Switch for its low loss of energy [3]. These components are widely used in a large number of radiation resistant and high-temperature resistant materials, for satellite communication, power electronics, aerospace and other fields.…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of working principles and applications of MOSFET and HEMT

2024

ACE

View full text Add to dashboard Cite

Semiconductor materials are currently one of the most core materials in the worlds high-tech industry, and the research and development of semiconductor materials is related to the improvement of human technological level. This paper presents a comparative study of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and High Electron Mobility Transistors (HEMTs), two pivotal components in electrical engineering, each with unique characteristics and functions. Despite structural similarities, MOSFETs and HEMTs differ significantly in operation and conduction methods. MOSFETs rely on an inversion layer formed at the semiconductor-oxide interface, controlled by gate voltage, for electron conduction. Conversely, HEMTs utilize a two-dimensional electron gas (2DEG) at the interface of materials like Gallium Nitride and Aluminum Gallium Nitride, offering high electron mobility crucial for performance. Both share similar I-V characteristics but differ in performance under various conditions. MOSFETs are cost-effective, ideal for mass production and general applications, while HEMTs excel in stability and performance in extreme conditions, suitable for high-performance needs. This study underscores the importance of selecting the right component based on application-specific requirements, highlighting MOSFETs for cost-efficiency and HEMTs for challenging environments. This article will provide some guidance for the research of MOSFET and HEMT.

show abstract