Deconvolution of ESR Spectra and Their Light-Induced Effect in a-Si:H

Hikita, Harumi; Takeda, K.; Kimura, Yutaka; Yokomichi, Haruo; Morigaki, Kazuo

doi:10.1143/jpsj.66.1730

Cited by 18 publications

(7 citation statements)

References 24 publications

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“…In order to understand the relevance of such adjustment, the accuracy and reliability of the parameters of both optimized hfs(B) and H-db have to be taken into account. The existence of H-related db in a-Si:H has been suggested on the basis of the small difference between the db-resonance shapes before and after the light soaking [32,33]. This difference has been used for powder pattern simulation and further estimation of the parameters of the H-db complex.…”

Section: Discussionmentioning

confidence: 99%

“…The best result with r = 0.61 is obtained with a simulation using parameters suggested for an H-db complex [32]. In summary, the described simulation procedure does not allow us to unambiguously identify the HF pattern observed in a-Si:H after the electron bombardment as one of the reported H-related centers listed in table 1.…”

Section: Spectrum Analysis and Simulationmentioning

confidence: 90%

“…For the simulations of hfs(B) we used all available literature where parameters of H-related paramagnetic states in Si are presented: several H-related paramagnetic centers observed in c-Si [14][15][16][17], and estimations for the H-related db complex suggested for a-Si:H [32,33]. All of these centers listed in table 1 have anisotropic gand A-tensors.…”

Section: Spectrum Analysis and Simulationmentioning

confidence: 99%

“…ESR measurements of the virtually identical hydrogenated/deuterated a-Si:H/D and µc-Si:H/D indicate that the features in the spectra of the irradiated material belong to a hydrogen-related hyperfine pattern. The nature of this center is discussed in the light of known H-related complexes found in c-Si [14][15][16][17] and suggested H-related db states in a-Si:H [32,33].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Astakhov

Carius

Petrusenko

et al. 2012

J. Phys.: Condens. Matter

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After irradiation of hydrogenated amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) with 2 MeV electrons at 100 K, we observe satellite-like components close to the dominating electron spin resonance (ESR) signal of these materials. The satellites overlap with the commonly observed dangling bond resonance and are proposed to originate from a hyperfine interaction with the nuclear magnetic moment of hydrogen atoms in a-Si:H and μc-Si:H. Our present study is focused on the verification of this hypothesis. Equivalent hydrogenated and deuterated a-/μc-Si:H/D materials have been investigated with ESR before and after 2 MeV electron bombardment. From the difference between ESR spectra of hydrogenated and deuterated samples we identify the doublet structure in the ESR spectra as a hyperfine pattern of hydrogen-related paramagnetic centers. The observations of H-related paramagnetic centers in a-/μc-Si:H are of particular interest in view of metastability models of a-Si:H, which include H-related complexes as precursors for the stabilization of the metastable Si dangling bonds. The nature of the observed center is discussed in the light of known H-related complexes in crystalline Si and suggested H-related dangling bonds in a-Si:H.

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Section: Discussionmentioning

confidence: 99%

Section: Spectrum Analysis and Simulationmentioning

confidence: 90%

Section: Spectrum Analysis and Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Astakhov

Carius

Petrusenko

et al. 2012

J. Phys.: Condens. Matter

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“…The coupling constant for hydrogen ranges between 0.35 mT and 1.0 mT (potentially higher) depending upon average distance between hydrogen and the dangling bond. 55,56 Since interactions with nearby hydrogen are much more likely than interactions with distant 29 Si, the fitting algorithm was constructed to consider two separate hopping paths. The first path (labeled Path 1 in Table 2) describes an electron hopping from a dangling bond interacting with nearby hydrogen to another dangling bond also interacting nearby hydrogen.…”

Section: Iv) Experimental Detailsmentioning

confidence: 99%

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Frantz

Harmon

McMillan

et al. 2020

Journal of Applied Physics

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We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance (NZFMR) spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 metal oxide field effect transistors (MOSFETs), and a-Si:H metal insulator semiconductor (MIS) capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response and fitting of the NZFMR spectrum via models developed 2 from the stochastic quantum Liouville equation could be a relatively simple yet powerful addition to the family of spin-based techniques used to explore the chemical and structural nature of point defects in semiconductor devices and insulators. I.

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Electronic and Optical Properties of Amorphous Silicon

2016

Amorphous Semiconductors

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Deconvolution of ESR Spectra and Their Light-Induced Effect in a-Si:H

Cited by 18 publications

References 24 publications

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Electronic and Optical Properties of Amorphous Silicon

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