Decomposition of CCl4 in an RF discharge?A gas chromatography and time-resolved emission spectroscopy study

Tiller, H.‐J.; Berg, Dorothea; Mohr, Robert H.

doi:10.1007/bf00568833

Cited by 40 publications

(8 citation statements)

References 20 publications

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“…This actinometry technique is widely used, for example, to measure sputtered metals (Al, Mo, etc) in magnetron discharges [73,[93][94][95]; H, CH and Si number densities in plasma-enhanced chemical-vapour-deposition applications [96,97]; H and O disassociation fractions [58,59,[98][99][100]; F and Cl concentrations in etching plasmas [62,63,88,[101][102][103][104] and Ar ion densities [105,106].…”

Section: Actinometrymentioning

confidence: 99%

Application of excitation cross sections to optical plasma diagnostics

Boffard

Lin

DeJoseph

2004

J. Phys. D: Appl. Phys.

197

177

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Many optical-based plasma diagnostic techniques require electron-impact excitation cross sections. In recent years, a considerable number of new results have become available for excitation of rare-gas atoms from both the ground state and metastable states. Using relatively simple techniques these cross sections can be combined with plasma emission measurements to extract many useful plasma parameters such as the electron temperature. Many of the limitations of simple plasma emission models such as the corona model can be overcome by using cross section measurements to select what particular emission lines to use in the analysis.

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Section: Actinometrymentioning

confidence: 99%

Application of excitation cross sections to optical plasma diagnostics

Boffard

Lin

DeJoseph

2004

J. Phys. D: Appl. Phys.

197

177

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“…A number of different species is created in the plasma excitation and relaxation zone of a CCl 4 discharge through electron impact dissociation and dissociative electron attachment. [9,10] The most important are atomic and molecular chlorine, commonly assumed to be the principal etchants. [7,11] Furthermore, unsaturated carbon compounds like C, C 2 , CCl, or C 2 Cl 4 can be formed in the discharge.…”

Section: Methodsmentioning

confidence: 99%

Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process

Piechulla

Bauer

Boehm

et al. 2016

Plasma Process. Polym.

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Reactive atmospheric plasma jets containing halogenous compounds are employed as locally acting tools for surface figure shaping or surface modification in ultra‐precision surface machining technologies. In the current study, the interaction between an atmospheric CCl4/O2 containing plasma jet with silicon surface is investigated aiming at elucidating the chemical kinetics of surface reactions. Different process regimes are identified comprising material removal as well as polymeric and oxide layer formation, which depend on the ratio of the reactive components and substrate surface temperature. XPS and SEM measurements support the findings.

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“…The value of K is constant only if the electron energy distribution remains constant in the plasma [39], [41], [42]. To make sure the electron energy distribution function (EEDF) is constant in our plasma, we have used a Langmuir probe [46].…”

Section: Optical Diagnostic Of Sf 6 -O 2 Plasmamentioning

confidence: 99%

“…The ratio kx/kAct can be assumed to be a constant, K, provided the collision cross-section of the two excitation reactions are represented by similar functions of the electron energy, or if the electron energy distribution remains constant [39], [41], [42]. If these conditions are met, then actinometry can be used relatively easily to estimate the relative or absolute concentrations of plasma species.…”

mentioning

confidence: 99%

Experimental investigation of SF6–O2 plasma for advancement of the anisotropic Si etch process

Alshaltami

Morshed

Gaman

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This study examines the impact of varying the internal process parameters, such as the concentrations of oxygen and fluorine in a SF6–O2 plasma, in two capacitively coupled plasma etch chambers with different geometries. Silicon wafers were used to investigate the anisotropic nature of etch profiles. The oxygen and fluorine concentrations were measured via optical emission spectroscopy using the actinometry technique, which requires the electron energy distribution function to remain unchanged under the different plasma conditions employed in this work. A Langmuir probe was used to investigate the electron energy distribution function, where the chamber pressure, power, and process duration were kept constant and the oxygen concentration was varied from 0 to 60 vol. %. The results showed that in both the chambers, the atomic concentrations of oxygen and fluorine increased rapidly when the fraction of oxygen in the SF6 plasma was increased to 20 vol. % and decreased with further addition of oxygen. Scanning electron microscopy showed an etch feature with a minimal lateral run-out at an O2 concentration of 20 vol. % in both the chambers. The distribution of electron energy and the concentrations of oxygen and fluorine exhibited similar patterns as functions of the oxygen concentration in the SF6 plasma in the two chambers, but the values were different because of the different chamber geometries, which also affected the silicon etch rate and lateral run-out.

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Decomposition of CCl4 in an RF discharge?A gas chromatography and time-resolved emission spectroscopy study

Cited by 40 publications

References 20 publications

Application of excitation cross sections to optical plasma diagnostics

Application of excitation cross sections to optical plasma diagnostics

Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process

Experimental investigation of SF6–O2 plasma for advancement of the anisotropic Si etch process

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