Decay times of the ultraviolet and green emission lines in ZnO

Skettrup, T.; Lidholt, L. R.

doi:10.1016/0038-1098(68)90519-x

Cited by 16 publications

(2 citation statements)

References 8 publications

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“…such as Si, [3,4] ZnO, [5,6] III-V group semiconductors, [7,8] graphene, [9] and transitionmetal dichalcogenides (TMDCs). [10,11] Unlike bulk TMDCs with an indirect band gap, the direct band gaps of bulk SnSe 2 , SnSe, InSe, and In 2 Se 3 range from 1.1 to 1.7 eV, and they have a high absorption coefficient in the visible light range, which makes them important photoelectric materials.…”

Section: Doi: 101002/smll201704052mentioning

confidence: 99%

“…These devices are regarded as a building blocks for advanced optoelectronics such as solar cells and photoelectrochemical cells . To date, ample potential materials as photodetectors have been proposed and well‐studied, such as Si, ZnO, III–V group semiconductors, graphene, and transition‐metal dichalcogenides (TMDCs) . Unlike bulk TMDCs with an indirect band gap, the direct band gaps of bulk SnSe 2 , SnSe, InSe, and In 2 Se 3 range from 1.1 to 1.7 eV, and they have a high absorption coefficient in the visible light range, which makes them important photoelectric materials .…”

Section: Introductionmentioning

confidence: 99%

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Phase‐Engineered Type‐II Multimetal–Selenide Heterostructures toward Low‐Power Consumption, Flexible, Transparent, and Wide‐Spectrum Photoresponse Photodetectors

Chen

Wang

et al. 2018

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Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W and an on/off current ratio of up to 10 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests.

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